用于光探测与测距的高功率、低线宽展宽半导体光放大器的有源区模式控制

Active Region Mode Control for High-Power, Low-Linewidth Broadened Semiconductor Optical Amplifiers for Light Detection and Ranging.

作者信息

Tang Hui, Zhang Meng, Liang Lei, Zhang Tianyi, Qin Li, Song Yue, Lei Yuxin, Jia Peng, Wang Yubing, Qiu Cheng, Zheng Chuantao, Li Xin, Chen Yongyi, Li Dan, Ning Yongqiang, Wang Lijun

机构信息

Key Laboratory of Luminescence Science and Technology, Chinese Academy of Sciences & State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.

Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.

出版信息

Sensors (Basel). 2024 Sep 20;24(18):6083. doi: 10.3390/s24186083.

DOI:10.3390/s24186083

PMID:39338828

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11435628/

Abstract

This paper introduces a semiconductor optical amplifier (SOA) with high power and narrow linewidth broadening achieved through active region mode control. By integrating mode control with broad-spectrum epitaxial material design, the device achieves high gain, high power, and wide band output. At a wavelength of 1550 nm and an ambient temperature of 20 °C, the output power reaches 757 mW when the input power is 25 mW, and the gain is 21.92 dB when the input power is 4 mW. The 3 dB gain bandwidth is 88 nm, and the linewidth expansion of the input laser after amplification through the SOA is only 1.031 times. The device strikes a balance between high gain and high power, offering a new amplifier option for long-range light detection and ranging (LiDAR).

摘要

本文介绍了一种通过有源区模式控制实现高功率和窄线宽展宽的半导体光放大器（SOA）。通过将模式控制与广谱外延材料设计相结合，该器件实现了高增益、高功率和宽带输出。在波长为1550 nm、环境温度为20°C时，输入功率为25 mW时输出功率达到757 mW，输入功率为4 mW时增益为21.92 dB。3 dB增益带宽为88 nm，输入激光通过SOA放大后的线宽扩展仅为1.031倍。该器件在高增益和高功率之间取得了平衡，为远程光探测和测距（LiDAR）提供了一种新的放大器选择。