National and Kapodistrian University of Athens, Department Informatics and Telecommunications, Athens, Greece.
Opt Lett. 2013 Jul 15;38(14):2404-6. doi: 10.1364/OL.38.002404.
In this Letter, a design for a tapered InAs/InGaAs quantum dot semiconductor optical amplifier is proposed and experimentally evaluated. The amplifier's geometry was optimized in order to reduce gain saturation effects and improve gain efficiency and beam quality. The experimental measurements confirm that the proposed amplifier allows for an elevated optical gain in the saturation regime, whereas a five-fold increase in the coupling efficiency to a standard single mode optical fiber is observed, due to the improvement in the beam quality factor M² of the emitted beam.
在这封信件中，我们提出并实验评估了一种锥形的 InAs/InGaAs 量子点半导体光放大器设计。为了降低增益饱和效应、提高增益效率和光束质量，我们对放大器的几何形状进行了优化。实验测量证实，所提出的放大器在饱和区允许更高的光增益，同时由于出射光束的光束质量因子 M²得到改善，观察到耦合效率提高了五倍，可以与标准单模光纤耦合。
