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基于第10族过渡金属二硫属化物PdSe的光电探测器的进展:展望与前景。

Advances in Group-10 Transition Metal Dichalcogenide PdSe-Based Photodetectors: Outlook and Perspectives.

作者信息

Alam Tawsif Ibne, Liu Kunxuan, Hani Sumaiya Umme, Ahmed Safayet, Tsang Yuen Hong

机构信息

Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China.

Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.

出版信息

Sensors (Basel). 2024 Sep 22;24(18):6127. doi: 10.3390/s24186127.

Abstract

The recent advancements in low-dimensional material-based photodetectors have provided valuable insights into the fundamental properties of these materials, the design of their device architectures, and the strategic engineering approaches that have facilitated their remarkable progress. This review work consolidates and provides a comprehensive review of the recent progress in group-10 two-dimensional (2D) palladium diselenide (PdSe)-based photodetectors. This work first offers a general overview of the various types of PdSe photodetectors, including their operating mechanisms and key performance metrics. A detailed examination is then conducted on the physical properties of 2D PdSe material and how these metrics, such as structural characteristics, optical anisotropy, carrier mobility, and bandgap, influence photodetector device performance and potential avenues for enhancement. Furthermore, the study delves into the current methods for synthesizing PdSe material and constructing the corresponding photodetector devices. The documented device performances and application prospects are thoroughly discussed. Finally, this review speculates on the existing trends and future research opportunities in the field of 2D PdSe photodetectors. Potential directions for continued advancement of these optoelectronic devices are proposed and forecasted.

摘要

基于低维材料的光电探测器的最新进展,为深入了解这些材料的基本特性、器件架构设计以及推动其显著进步的战略工程方法提供了宝贵见解。本综述工作对基于第10族二维(2D)二硒化钯(PdSe)的光电探测器的最新进展进行了整合和全面回顾。这项工作首先概述了各类PdSe光电探测器,包括其工作机制和关键性能指标。接着详细研究了2D PdSe材料的物理特性,以及诸如结构特征、光学各向异性、载流子迁移率和带隙等指标如何影响光电探测器器件性能以及潜在的增强途径。此外,该研究深入探讨了目前合成PdSe材料和构建相应光电探测器器件的方法。对已记录的器件性能和应用前景进行了全面讨论。最后,本综述推测了2D PdSe光电探测器领域的现有趋势和未来研究机会。提出并预测了这些光电器件持续进步的潜在方向。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a02/11435463/586d07e3f830/sensors-24-06127-g001.jpg

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