Gauriot Nicolas, Pandya Raj, Alexander-Webber Jack, Rao Akshay
Cavendish Laboratory, University of Cambridge, Cambridge, United Kingdom.
Department of Engineering, University of Cambridge, Cambridge, United Kingdom.
J Phys Condens Matter. 2024 Oct 25;37(3). doi: 10.1088/1361-648X/ad81a1.
Atomically thin group IV monochalcogenides or phosphorene analogues are a promising family of materials. Theoretical calculations predict that monolayers (MLs) should be semiconducting, ferroelectric and ferroelastic at room temperature, exhibit large charge mobilities and large non-linear optical response. Yet, experimental studies of these systems are scarce because of the difficulty to produce such MLs. Here we focus on two members of this family: GeSe and SnS. We demonstrate a simple mechanical exfoliation method to produce ML samples on gold substrates. We observe the evolution of the Raman scattering as a function of layers and the anisotropic optical response from reflectance contrast measurements. To the best of our knowledge this is the first report of mechanical exfoliation down to the ML of these materials and the first realisation of ML GeSe.
原子级薄的IV族单硫属化物或类磷烯材料是一类很有前景的材料。理论计算预测,单分子层(MLs)在室温下应为半导体、铁电体和铁弹性体,具有高电荷迁移率和大的非线性光学响应。然而,由于难以制备此类单分子层,对这些体系的实验研究很少。在此,我们聚焦于该材料家族的两个成员:GeSe和SnS。我们展示了一种简单的机械剥离方法,可在金衬底上制备单分子层样品。我们通过反射率对比度测量观察了拉曼散射随层数的变化以及各向异性光学响应。据我们所知,这是首次报道将这些材料机械剥离至单分子层以及首次实现单分子层GeSe。