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液相剥离制备具有增强光电性能的 SnS 单层

Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties.

机构信息

Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Heraklion, 700 13, Greece.

Department of Physics, University of Crete, Heraklion, 710 03, Greece.

出版信息

Adv Sci (Weinh). 2023 Feb;10(6):e2201842. doi: 10.1002/advs.202201842. Epub 2022 Dec 27.

DOI:10.1002/advs.202201842
PMID:36574469
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9951343/
Abstract

Recent advances in atomically thin two dimensional (2D) anisotropic group IV -VI metal monochalcogenides (MMCs) and their fascinating intrinsic properties and potential applications are hampered due to an ongoing challenge of monolayer isolation. Among the most promising MMCs, tin (II) sulfide (SnS) is an earth-abundant layered material with tunable bandgap and anisotropic physical properties, which render it extraordinary for electronics and optoelectronics. To date, however, the successful isolation of atomically thin SnS single layers at large quantities has been challenging due to the presence of strong interlayer interactions, attributed to the lone-pair electrons of sulfur. Here, a novel liquid phase exfoliation approach is reported, which enables the overcome of such strong interlayer binding energy. Specifically, it demonstrates that the synergistic action of external thermal energy with the ultrasound energy-induced hydrodynamic force in solution gives rise to the systematic isolation of highly crystalline SnS monolayers (1L-SnS). It is shown that the exfoliated 1L-SnS crystals exhibit high carrier mobility and deep-UV spectral photodetection, featuring a fast carrier response time of 400 ms. At the same time, monolayer-based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10 A W and remarkable stability upon prolonged operation in ambient conditions. This study opens a new avenue for large-scale isolation of highly crystalline SnS and other MMC manolayers for a wide range of applications, including extended area nanoelectronic devices, printed from solution.

摘要

最近在原子级薄二维(2D)各向异性 IV-VI 族金属单卤化物(MMC)及其迷人的固有特性和潜在应用方面取得了进展,但由于单层分离的持续挑战而受到阻碍。在最有前途的 MMC 中,二硫化锡(SnS)是一种丰富的层状材料,具有可调带隙和各向异性物理特性,使其在电子和光电子学方面具有非凡的应用。然而,迄今为止,由于硫的孤对电子的存在,大量成功分离原子级薄的 SnS 单层仍然具有挑战性,因为存在强的层间相互作用。在这里,报道了一种新的液相剥离方法,该方法能够克服这种强的层间结合能。具体来说,它表明外部热能与溶液中超声能量诱导的流体动力协同作用导致了高结晶 SnS 单层(1L-SnS)的系统分离。结果表明,剥离的 1L-SnS 晶体表现出高载流子迁移率和深紫外光谱光电探测性能,具有 400 ms 的快速载流子响应时间。同时,溶液制备的基于单层的 SnS 晶体管器件具有高开关比,响应率为 6.7×10 A W,在环境条件下长时间运行具有显著的稳定性。这项研究为大规模分离高结晶 SnS 和其他 MMC 单层开辟了新的途径,可应用于包括扩展面积纳米电子器件在内的各种应用,这些器件都可以通过溶液印刷来实现。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1cc9/9951343/a8d4149f60b6/ADVS-10-2201842-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1cc9/9951343/252a54ba1a47/ADVS-10-2201842-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1cc9/9951343/ed96842ea5f7/ADVS-10-2201842-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1cc9/9951343/a8d4149f60b6/ADVS-10-2201842-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1cc9/9951343/252a54ba1a47/ADVS-10-2201842-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1cc9/9951343/ed96842ea5f7/ADVS-10-2201842-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1cc9/9951343/a8d4149f60b6/ADVS-10-2201842-g001.jpg

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