Wu Shengqiang, Li Siheng, Meng Yuan, Qiu Zanlin, Fu Wei, Chen Ji, Zhang Jin, Zhao Xiaoxu
School of Materials Science and Engineering, Peking University, Beijing 100871, China.
School of Physics, Peking University, Beijing 100871, China.
J Am Chem Soc. 2024 Oct 1. doi: 10.1021/jacs.4c09842.
Self-intercalation in two-dimensional (2D) materials, converting 2D materials into ultrathin covalently bonded materials, presents great possibilities for studying a new family of quantum-confined materials with the potential to realize multifunctional behavior. However, understanding the mechanisms and associated in situ kinetics of synthesizing self-intercalated 2D (ic-2D) materials, particularly at the atomic scale, remains elusive, greatly hindering the practical applications of ic-2D crystals. Here, we successfully in situ synthesized ic-2D thin films via thermal annealing of their parental TMDCs inside an electron microscope. We atomically visualized the evolution from TaS and NbS into the corresponding ic-2D TaS and ic-2D NbS, respectively, by in situ scanning transmission electron microscopy (STEM). The self-intercalation process in TaS is atomically realized by metal adatom edge adsorption and subsequent diffusion in an atom-by-atom manner. On the other hand, MoS and MoSe tend to coalesce into metal crystals under the same annealing conditions, suggesting that the self-intercalation process is predominantly controlled by thermodynamic factors as further verified by density functional theory (DFT). By varying the ramping rate and annealing temperature, the coverage and spatial arrangement of the filling sites can be precisely tuned, ranging from 2 × , × , or Ta trimers, as predominantly gauged by kinetic factors. Our work sheds light on the thermodynamics and growth kinetics involved in ic-2D formation and paves the way for growing highly crystalline ic-2D materials with intercalation concentration and topology-dependent properties.
二维(2D)材料中的自嵌入,即将二维材料转化为超薄共价键合材料,为研究一类新的量子限域材料带来了巨大可能性,这类材料有潜力实现多功能行为。然而,理解合成自嵌入二维(ic-2D)材料的机制及相关原位动力学,尤其是在原子尺度上,仍然难以捉摸,这极大地阻碍了ic-2D晶体的实际应用。在此,我们通过在电子显微镜内对其母体过渡金属二硫族化合物(TMDCs)进行热退火,成功原位合成了ic-2D薄膜。我们通过原位扫描透射电子显微镜(STEM),分别从原子层面观察到TaS和NbS向相应的ic-2D TaS和ic-2D NbS的演化过程。TaS中的自嵌入过程在原子层面上是通过金属吸附原子的边缘吸附以及随后逐个原子的扩散来实现的。另一方面,在相同的退火条件下,MoS和MoSe倾向于聚合成金属晶体,这表明自嵌入过程主要受热力学因素控制,密度泛函理论(DFT)进一步证实了这一点。通过改变升温速率和退火温度,可以精确调整填充位点的覆盖率和空间排列,范围从2×、×或Ta三聚体,这主要由动力学因素决定。我们的工作揭示了ic-2D形成过程中涉及的热力学和生长动力学,为生长具有插层浓度和拓扑相关特性的高度结晶ic-2D材料铺平了道路。