Suppr超能文献

通过自嵌入工程共价键合的二维层状材料。

Engineering covalently bonded 2D layered materials by self-intercalation.

机构信息

Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.

Department of Chemistry and Centre for Advanced 2D Materials, National University of Singapore, Singapore, Singapore.

出版信息

Nature. 2020 May;581(7807):171-177. doi: 10.1038/s41586-020-2241-9. Epub 2020 May 13.

Abstract

Two-dimensional (2D) materials offer a unique platform from which to explore the physics of topology and many-body phenomena. New properties can be generated by filling the van der Waals gap of 2D materials with intercalants; however, post-growth intercalation has usually been limited to alkali metals. Here we show that the self-intercalation of native atoms into bilayer transition metal dichalcogenides during growth generates a class of ultrathin, covalently bonded materials, which we name ic-2D. The stoichiometry of these materials is defined by periodic occupancy patterns of the octahedral vacancy sites in the van der Waals gap, and their properties can be tuned by varying the coverage and the spatial arrangement of the filled sites. By performing growth under high metal chemical potential we can access a range of tantalum-intercalated TaS(Se), including 25% Ta-intercalated TaS, 33.3% Ta-intercalated TaS, 50% Ta-intercalated TaS, 66.7% Ta-intercalated TaSe (which forms a Kagome lattice) and 100% Ta-intercalated TaSe. Ferromagnetic order was detected in some of these intercalated phases. We also demonstrate that self-intercalated VS, InSe and FeTe can be grown under metal-rich conditions. Our work establishes self-intercalation as an approach through which to grow a new class of 2D materials with stoichiometry- or composition-dependent properties.

摘要

二维(2D)材料为探索拓扑和多体现象的物理学提供了一个独特的平台。通过在 2D 材料的范德华间隙中填充插层剂,可以产生新的性质;然而,生长后的插层通常仅限于碱金属。在这里,我们表明,在生长过程中,本征原子自插入双层过渡金属二卤化物中会产生一类超薄的、共价键合的材料,我们将其命名为 ic-2D。这些材料的化学计量比由范德华间隙中八面体空位的周期性占据模式定义,其性质可以通过改变填充位置的覆盖率和空间排列来调节。通过在高金属化学势下进行生长,我们可以获得一系列钽插层 TaS(Se),包括 25% Ta 插层 TaS、33.3% Ta 插层 TaS、50% Ta 插层 TaS、66.7% Ta 插层 TaSe(形成 Kagome 晶格)和 100% Ta 插层 TaSe。在一些插层相中检测到铁磁有序。我们还证明,在富金属条件下可以生长自插层 VS、InSe 和 FeTe。我们的工作确立了自插层作为一种生长具有化学计量或组成依赖性性质的新型 2D 材料的方法。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验