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单层WSiN在黑暗和明亮条件下的空气稳定性。

Air stability of monolayer WSiN in dark and bright conditions.

作者信息

Driouech Mustapha, Cocchi Caterina, Ramzan Muhammad Sufyan

机构信息

Institut für Physik, Carl von Ossietzky Universität, 26129, Oldenburg, Germany.

Center for Nanoscale Dynamics (CeNaD), Carl von Ossietzky Universität, 26129, Oldenburg, Germany.

出版信息

Sci Rep. 2024 Oct 6;14(1):23254. doi: 10.1038/s41598-024-73614-2.

Abstract

Two-dimensional materials with chemical formula MAZ are a promising class of materials for optoelectronic applications. To exploit their potential, their stability with respect to air pollution has to be analyzed under different conditions. In a first-principle study based on density functional theory, we investigate the adsorption of three common environmental gas molecules (O, HO, and CO) on monolayer WSiN, an established representative of the MAZ family. The computed adsorption energies, charge transfer, and projected density of states of the polluted monolayer indicate a relatively weak interaction between substrate and molecules resulting in an ultrashort recovery time of the order of nanoseconds. O and water introduce localized states in the upper valence region but do not alter the semiconducting nature of WSiN nor its band-gap size apart from a minor variation of a few tens of meV. Exploring the same scenario in the presence of photogenerated electrons and holes, we do not notice any substantial difference except for O chemisorption when negative charge carriers are in the system. In this case, monolayer WSiN exhibits signs of irreversible oxidation, testified by an adsorption energy of -5.5 eV leading to an infinitely long recovery time, a rearrangement of the outermost atomic layer bonding with the pollutant, and n-doping of the system. Our results indicate stability of WSiN against HO and CO in both dark and bright conditions, suggesting the potential of this material in nanodevice applications.

摘要

化学式为MAZ的二维材料是一类很有前途的用于光电子应用的材料。为了挖掘它们的潜力,必须在不同条件下分析它们相对于空气污染的稳定性。在基于密度泛函理论的第一性原理研究中,我们研究了三种常见环境气体分子(O、HO和CO)在单层WSiN上的吸附情况,WSiN是MAZ家族已确立的代表性材料。计算得到的污染单层的吸附能、电荷转移和投影态密度表明,基底与分子之间的相互作用相对较弱,导致恢复时间极短,约为纳秒量级。O和水在上价区引入了局域态,但除了几十毫电子伏特的微小变化外,并没有改变WSiN的半导体性质及其带隙大小。在存在光生电子和空穴的情况下探究相同的情况,我们没有发现任何实质性差异,除了在系统中存在负电荷载流子时O的化学吸附情况。在这种情况下,单层WSiN表现出不可逆氧化的迹象,吸附能为-5.5 eV,导致恢复时间无限长,最外层原子层与污染物的键合发生重排,以及系统的n型掺杂。我们的结果表明,WSiN在黑暗和明亮条件下对HO和CO都具有稳定性,这表明这种材料在纳米器件应用中具有潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b1a9/11456585/61aac66166a7/41598_2024_73614_Fig1_HTML.jpg

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