Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India.
J Phys Chem Lett. 2023 Feb 16;14(6):1494-1503. doi: 10.1021/acs.jpclett.2c03108. Epub 2023 Feb 6.
Using first-principles calculations, we report the electronic properties with a special focus on the band splitting in the WSiN class of materials. Due to the broken inversion symmetry and strong spin-orbit coupling, we detect coupled spin-valley effects at the corners of the first Brillouin zone (BZ). Additionally, we observe cubically and linearly split bands around the Γ and M points, respectively. The in-plane mirror symmetry (σ) and reduced symmetry of the arbitrary -point, enforce the persistent spin textures (PST) to occur in full BZ. We induce the Rashba splitting by breaking the σ through an out-of-plane external electric field (EEF). The inversion asymmetric site point group of the W atom introduces the hidden spin polarization in centrosymmetric layered bulk counterparts. Low energy models demonstrate that the PST along the M-K line is robust to EEF and layer thickness, making them suitable for applications in spintronics and valleytronics.
利用第一性原理计算,我们报告了电子性质,特别关注 WSiN 类材料中的能带分裂。由于反演对称性的破坏和强自旋轨道耦合,我们在第一布里渊区(BZ)的角上检测到耦合的自旋-谷效应。此外,我们观察到在 Γ 和 M 点附近的立方和线性分裂能带。面内镜像对称(σ)和任意点的对称降低,强制持续自旋织构(PST)在整个 BZ 中发生。通过在平面外施加外电场(EEF)破坏 σ,诱导拉什巴分裂。W 原子的反演不对称位点群在中心对称层状体相中引入了隐藏的自旋极化。低能模型表明,沿 M-K 线的 PST 对 EEF 和层厚具有鲁棒性,使其适合于在自旋电子学和谷电子学中的应用。