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通过硅雪崩光电二极管内置热电冷却器进行重复辐照和热退火。

Repeated irradiation and thermal annealing via built-in thermo-electric coolers of Si avalanche photodiodes.

作者信息

Wu Shuin Jian, Chowdhury Arya, Soe Moe Thar, Ling Alexander

机构信息

Centre for Quantum Technologies, National University of Singapore, 3 Science Drive 2, Singapore, 117543, Singapore.

Department of Physics, Faculty of Science, National University of Singapore, 2 Science Drive 3, Singapore, 117551, Singapore.

出版信息

Sci Rep. 2024 Oct 7;14(1):23331. doi: 10.1038/s41598-024-72535-4.

Abstract

When operating in space, on-board Silicon Geiger-Mode Avalanche Photodiodes (GM-APDs) are exposed to radiation damage that result in an increase in dark count rates. Thermal annealing has been found to mitigate the damage, although prior studies have largely focused on annealing following a single session of proton irradiation. This work reports that thermal annealing can be performed simply with the built-in thermo-electric coolers of the GM-APDs. Annealing was also done in 10 min intervals for a clearer view of the recovery curve. Mitigation of damage from repeated radiation was observed from the: (1) halving of the increase in dark count rates on average and (2) outperformance of room temperature annealing ( C) by 33 . Additionally, we show that heavy doses of radiation (21 krad) have a probability of causing Random Telegraph Signals in GM-APDs that can be suppressed by lowering the operating temperature.

摘要

在太空运行时,机载硅盖革模式雪崩光电二极管(GM-APD)会受到辐射损伤,导致暗计数率增加。已发现热退火可减轻这种损伤,尽管先前的研究主要集中在单次质子辐照后的退火。这项工作报告称,利用GM-APD内置的热电冷却器即可简单地进行热退火。为了更清楚地观察恢复曲线,退火还以10分钟的间隔进行。从以下方面观察到了对重复辐射损伤的减轻:(1)暗计数率增加平均减半;(2)比室温退火( 摄氏度)的性能提高33 。此外,我们表明,高剂量辐射(21千拉德)有可能在GM-APD中引起随机电报信号,通过降低工作温度可以抑制这种信号。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6c06/11458804/4ba17327924c/41598_2024_72535_Fig1_HTML.jpg

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