Liu Qiaoli, Xu Li, Jin Yuxin, Zhang Shifeng, Wang Yitong, Hu Anqi, Guo Xia
State Key Laboratory for Information Photonics and Optical Communications, School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Sensors (Basel). 2022 May 20;22(10):3873. doi: 10.3390/s22103873.
Highly sensitive ultraviolet (UV) photodetectors are highly desired for industrial and scientific applications. However, the responsivity of silicon photodiodes in the UV wavelength band is relatively low due to high-density Si/SiO interface states. In this paper, a coplanar avalanche photodiode (APD) was developed with a virtual guard ring design. When working in Geiger mode, it exhibited a strong UV response. The responsivity of 4 × 10 A/W (corresponding to a gain of 8 × 10) at 261 nm is measured under the incident power of 0.6 μW with an excess bias of 1.5 V. To the best of our knowledge, the maximum 3-dB bandwidth of 1.4 GHz is the first report ever for a Si APD when working in the Geiger mode in spite of the absence of an integrated CMOS read-out circuit.
工业和科学应用对高灵敏度紫外（UV）光电探测器有很高的需求。然而，由于高密度的Si/SiO界面态，硅光电二极管在紫外波段的响应度相对较低。本文采用虚拟保护环设计开发了一种共面雪崩光电二极管（APD）。当工作在盖革模式时，它表现出强烈的紫外响应。在0.6 μW的入射功率和1.5 V的过偏置下，在261 nm处测得的响应度为4×10 A/W（对应增益为8×10）。据我们所知，尽管没有集成CMOS读出电路，但1.4 GHz的最大3 dB带宽是首次报道的硅APD在盖革模式下工作时的情况。
