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化学气相沉积(CVD)聚合聚噻吩薄膜的形态学与分子控制

Morphological and molecular control of chemical vapor deposition (CVD) polymerized polythiophene thin films.

作者信息

Smith Phil M, Su Laisuo, Xu Yanfei, Reeja-Jayan B, Shen Sheng

机构信息

Department of Mechanical Engineering, Carnegie Mellon University Pittsburgh PA 15213 USA

Department of Materials Science and Engineering, University of Texas at Dallas Richardson TX 75080 USA.

出版信息

RSC Adv. 2024 Oct 7;14(43):31723-31729. doi: 10.1039/d4ra06472k. eCollection 2024 Oct 1.

DOI:10.1039/d4ra06472k
PMID:39376526
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11457158/
Abstract

Oxidative chemical vapor deposition (oCVD) has emerged as one of the most promising techniques for conjugated polymer deposition, especially for unsubstituted polythiophene thin films. oCVD overcomes the insolubility challenge that unsubstituted polythiophene (PT) presents and adds the ability to control morphological and molecular structure. This control is important for enhancing the performance of devices which incorporate organic conductors. In this work, Raman spectroscopy, UV-vis spectroscopy, and AFM reveal that the relative amount of distortion in the polymer chains, the conjugation length and the film roughness are all affected by the CVD deposition conditions, in particular the reactor pressure. PT films deposited at 150 mT and 300 mT are found to have lower chain distortion, longer conjugation lengths and lower surface roughness compared to other deposition pressures. The oCVD PT film is also directly grafted to the trichloro(phenylethyl)silane (PTS) treated substrates, where the effect of PTS grafting is observed to significantly affect film roughness. In addition, we report the first study of the effect of oCVD PT films on the performance of lithium-ion battery electrodes. These oCVD PT films are used to engineer a LiCoO cathode in lithium-ion batteries. The observed improvements are a 52% increase in the discharge capacity (67 mA h g to 102 mA h g) at 10C and a 500% improvement in cycling stability tested at 5C within the voltage range of 3.0-4.5 V (capacity fading rate is reduced from 1.92%/cycle to 0.32%/cycle).

摘要

氧化化学气相沉积(oCVD)已成为共轭聚合物沉积最有前景的技术之一,特别是对于未取代的聚噻吩薄膜。oCVD克服了未取代聚噻吩(PT)存在的不溶性挑战,并增加了控制形态和分子结构的能力。这种控制对于提高包含有机导体的器件性能很重要。在这项工作中,拉曼光谱、紫外可见光谱和原子力显微镜表明,聚合物链中的相对畸变程度、共轭长度和薄膜粗糙度都受化学气相沉积条件的影响,特别是反应器压力。与其他沉积压力相比,发现在150 mT和300 mT下沉积的PT薄膜具有更低的链畸变、更长的共轭长度和更低的表面粗糙度。oCVD PT薄膜还直接接枝到经三氯(苯乙基)硅烷(PTS)处理的衬底上,观察到PTS接枝的效果会显著影响薄膜粗糙度。此外,我们首次报道了关于oCVD PT薄膜对锂离子电池电极性能影响的研究。这些oCVD PT薄膜用于设计锂离子电池中的LiCoO阴极。观察到的改进包括在10C时放电容量提高52%(从67 mA h/g提高到102 mA h/g),以及在3.0 - 4.5 V电压范围内于5C测试时循环稳定性提高500%(容量衰减率从1.92%/循环降低到

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cefc/11457158/f6aac7cc6b0c/d4ra06472k-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cefc/11457158/8791f9758f01/d4ra06472k-f1.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cefc/11457158/f6aac7cc6b0c/d4ra06472k-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cefc/11457158/8791f9758f01/d4ra06472k-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cefc/11457158/6e97b7dd0abe/d4ra06472k-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/cefc/11457158/8ed349c09f9d/d4ra06472k-f3.jpg
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