Xue Junjun, Chen Wei, Hu Shanwen, Chen Zhouyu, Fang Haoyu, Zhi Ting, Shao Pengfei, Cai Qing, Yang Guofeng, Gu Yan, Wang Jin, Chen Dunjun
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology, Nanjing 210023, People's Republic of China.
Nanotechnology. 2024 Oct 16;36(1). doi: 10.1088/1361-6528/ad8450.
Using a first-principles approach, this study delves into the effects of strain and electrostatic doping on the electronic and magnetic properties of the GaN/VTevan der Waals (vdW) heterostructure. The results reveal that when the GaN/VTevdW heterostructure is doped with 0.1/0.2of electrostatic charge, its magnetization direction undergoes a remarkable reversal, shifting from out-of-plane orientation to in-plane direction. Therefore, we conduct a thorough investigation into the influence of electron orbitals on magnetic anisotropy energy. In addition, as the strain changes from -1% to 1%, the 100% spin polarization region of the GaN/VTevdW heterostructure becomes smaller. It is worth noting that at a doping concentration of 0.1, the GaN/VTevdW heterostructure has a Curie temperature of 30 K above room temperature. This comprehensive study provides valuable insights and provides a reference for analyzing the electronic and magnetic properties of low-dimensional systems.
本研究采用第一性原理方法，深入探究应变和静电掺杂对GaN/VTe范德华（vdW）异质结构的电子和磁性能的影响。结果表明，当GaN/VTe vdW异质结构掺杂0.1/0.2的静电荷时，其磁化方向发生显著反转，从面外取向转变为面内方向。因此，我们深入研究了电子轨道对磁各向异性能的影响。此外，随着应变从-1%变化到1%，GaN/VTe vdW异质结构的100%自旋极化区域变小。值得注意的是，在掺杂浓度为0.1时，GaN/VTe vdW异质结构的居里温度比室温高30K。这项综合研究提供了有价值的见解，并为分析低维系统的电子和磁性能提供了参考。
