Wu Qianqian, Wang Jin, Zhi Ting, Zhuang Yanling, Tao Zhikuo, Shao Pengfei, Cai Qing, Yang Guofeng, Xue Junjun, Chen Dunjun, Zhang Rong
College of Electronic and Optical Engineering & College of Flexible electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing 210023, People's Republic of China.
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, People's Republic of China.
Nanotechnology. 2024 May 9;35(30). doi: 10.1088/1361-6528/ad3d64.
The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy (PMA) is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VSvdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VSvdW heterostructure and 100% spin polarization efficiency. Additionally, GaN/VSvdW heterostructure still maintains PMA under biaxial strain, which is indispensable for high-density information storage. We further explore the electron, magnetic, and transport properties of VS/GaN/VSvdW sandwich heterostructure, where the magnetoresistivity can reach as high as 40%. Our research indicates that the heterostructure constructed by combining the ferromagnet VSand the non-magnetic semiconductor GaN is a promising material for vdW spin valve devices at room temperature.
追求具有高居里温度和强垂直磁各向异性（PMA）的范德华（vdW）异质结构对于下一代自旋电子器件的发展至关重要。采用第一性原理计算来研究双轴应变和静电掺杂下GaN/VS vdW异质结构的电子结构和磁特性。我们的研究结果表明，GaN/VS vdW异质结构中存在具有显著居里温度（477 K，远高于室温）的铁磁基态以及100%的自旋极化效率。此外，GaN/VS vdW异质结构在双轴应变下仍保持PMA，这对于高密度信息存储是不可或缺的。我们进一步探索了VS/GaN/VS vdW三明治异质结构的电子、磁和输运性质，其磁电阻可高达40%。我们的研究表明，由铁磁体VS和非磁性半导体GaN组合构建的异质结构是室温下vdW自旋阀器件的一种有前途的材料。
