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范德华材料中强表面增强相干声子的产生

Strong Surface-Enhanced Coherent Phonon Generation in van der Waals Materials.

作者信息

Brennan Christian, Joly Alan G, Wang Chih-Feng, Xie Ti, O'Callahan Brian T, Crampton Kevin, Teklu Alem, Shi Leilei, Hu Ming, Zhang Qian, Kuthirummal Narayanan, Arachchige Hasitha Suriya, Chaturvedi Apoorva, Zhang Hua, Mandrus David, Gong Cheng, Gong Yu

机构信息

Department of Physics and Astronomy, College of Charleston, 58 Coming Street, Charleston, South Carolina 29424, United States.

Physical Sciences Division, Pacific Northwest National Laboratory, P.O. Box 999, Richland, Washington 99352, United States.

出版信息

J Phys Chem Lett. 2024 Oct 24;15(42):10442-10450. doi: 10.1021/acs.jpclett.4c02208. Epub 2024 Oct 10.

Abstract

Terahertz (THz) coherent phonons have emerged as promising candidates for the next generation of high-speed, low-energy information carriers in atomically thin phononic or phonon-integrated on-chip devices. However, effectively manipulating THz coherent phonons remains a significant challenge. In this study, we investigated THz coherent phonon generation in exfoliated van der Waals (vdW) flakes of FeGeTe, FeGeTe, and FePS. We successfully generated the THz A coherent phonon mode in these vdW flakes. An innovative approach involved partially exfoliating vdW flakes on a gold substrate and partially on a silicon (Si) substrate to compare the THz coherent phonon generation between both sides. Interestingly, we observed a significantly enhanced THz coherent phonon in the vdW/gold area compared with that in the vdW/Si area. Frequency-domain Raman mapping across the vdW flakes corroborated these findings. Numerical simulations further indicated a stronger enhanced surface field in vdW/gold structures than in vdW/Si structures. Consequently, we attribute the observed enhancement in THz coherent phonon generation to the increased surface field on the gold substrate. This enhancement was consistent across the three different vdW materials studied, suggesting the universality of this strategy. Our results hold promise for advancing the design of THz phononic and phonon-integrated devices.

摘要

太赫兹(THz)相干声子已成为下一代高速、低能耗信息载体的有力候选者,可应用于原子级薄的声子或声子集成片上器件。然而,有效操控太赫兹相干声子仍然是一项重大挑战。在本研究中,我们研究了在剥离的FeGeTe、FeGeTe和FePS范德华(vdW)薄片中太赫兹相干声子的产生。我们在这些vdW薄片中成功产生了太赫兹A相干声子模式。一种创新方法是将vdW薄片部分剥离在金衬底上,部分剥离在硅(Si)衬底上,以比较两侧的太赫兹相干声子产生情况。有趣的是,我们观察到与vdW/Si区域相比,vdW/金区域的太赫兹相干声子显著增强。对vdW薄片进行的频域拉曼映射证实了这些发现。数值模拟进一步表明,vdW/金结构中的表面场增强比vdW/Si结构更强。因此,我们将观察到的太赫兹相干声子产生增强归因于金衬底上表面场的增加。这种增强在研究的三种不同vdW材料中是一致的,表明该策略具有普遍性。我们的结果为推进太赫兹声子和声子集成器件的设计带来了希望。

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