Li Yiliu, Arsenault Eric A, Yang Birui, Wang Xi, Park Heonjoon, Guo Yinjie, Taniguchi Takashi, Watanabe Kenji, Gamelin Daniel, Hone James C, Dean Cory R, Maehrlein Sebastian F, Xu Xiaodong, Zhu Xiaoyang
Department of Chemistry, Columbia University, New York, New York 10027, United States.
Department of Physics, Columbia University, New York, New York 10027, United States.
Nano Lett. 2024 Oct 2;24(39):12156-12162. doi: 10.1021/acs.nanolett.4c03129. Epub 2024 Sep 20.
van der Waals (vdW) structures host a broad range of physical phenomena. New opportunities arise if different functional layers are remotely modulated or coupled in a device structure. Here we demonstrate the in situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) moirés with on-chip terahertz (THz) waves. Using common dual-gated device structures of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ∼0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control, can serve as on-chip opto-elastic transducers to generate THz waves for coherent control and vibrational entanglement of functional layers in moiré devices.
范德瓦尔斯(vdW)结构呈现出广泛的物理现象。如果在器件结构中对不同的功能层进行远程调制或耦合,就会出现新的机遇。在此,我们展示了利用片上太赫兹(THz)波对过渡金属二硫属化物(TMD)莫尔条纹中的莫尔激子和相关莫特绝缘体进行原位相干调制。通过使用一种常见的双栅极器件结构,即TMD莫尔条纹双层夹在两个带有六方氮化硼(h-BN)间隔层的少层石墨烯(fl-Gr)栅极之间,我们通过飞秒激光激发从fl-Gr栅极发射出频率约为0.4 - 1太赫兹的相干声子波包。这些波穿过h-BN间隔层,以精确的时间到达TMD双层,并对莫尔激子或莫特态进行相干调制。这些结果表明,通常用于电控制的fl-Gr栅极可以作为片上光弹换能器,产生太赫兹波,用于对莫尔器件中的功能层进行相干控制和振动纠缠。