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有源硅微环腔中高频自脉冲振荡的演示。

Demonstration of high-frequency self-pulsing oscillations in an active silicon micro-ring cavity.

作者信息

Shetewy Abdou Eltamimy, Catuneanu Mircea Traian, He Menglong, Jamshidi Kambiz

机构信息

Integrated Photonic Devices Group, Chair of RF and Photonics engineering, TU Dresden, 01069, Dresden, Germany.

出版信息

Sci Rep. 2024 Oct 11;14(1):23823. doi: 10.1038/s41598-024-75295-3.

Abstract

We experimentally investigated the self-pulsing (SP) oscillations induced by the thermo-optic, free carrier, and Kerr nonlinear effects in integrated active silicon microring resonators. We demonstrate high frequency self-pulsing oscillations (up to 30 MHz) by applying a few millivolts of reverse bias voltage to the PIN junction of the active cavity. We illustrate that the shape of those oscillations (i.e., frequency and duty cycle) can be controlled by adjusting the CW input power and applying a reverse bias voltage to the PIN junction for carrier removal. This controlling is important for synchronizing the cavity which is crucial for neural network applications. Furthermore, we utilize a mathematical model for visualizing the stability regions by numerically studying coupled mode theory in silicon microcavity under different conditions.

摘要

我们通过实验研究了集成有源硅微环谐振器中热光、自由载流子和克尔非线性效应所引发的自脉冲(SP)振荡。通过向有源腔的PIN结施加几毫伏的反向偏置电压,我们展示了高频自脉冲振荡(高达30 MHz)。我们表明,通过调整连续波输入功率以及向PIN结施加反向偏置电压以去除载流子,可以控制这些振荡的形状(即频率和占空比)。这种控制对于使腔同步很重要,而腔同步对于神经网络应用至关重要。此外,我们利用一个数学模型,通过对不同条件下硅微腔中的耦合模理论进行数值研究,来可视化稳定区域。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/623d/11470062/5476789d859f/41598_2024_75295_Fig1_HTML.jpg

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