Chen Dongyang, Wang Hui, Sun Dianming, Wu Sen, Wang Kai, Zhang Xiao-Hong, Zysman-Colman Eli
Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 21523, P. R. China.
Organic Semiconductor Centre, EaStCHEM School of Chemistry, University of St Andrews, St Andrews, Fife, KY16 9ST, UK.
Adv Mater. 2024 Dec;36(50):e2412761. doi: 10.1002/adma.202412761. Epub 2024 Oct 12.
Here the utility and potential of an emitter design are demonstrated, consisting of a narrowband-emitting multiresonant thermally activated delayed fluorescent (MR-TADF) core that is decorated with a suitably higher energy donor-acceptor TADF moiety. Not only does this D-A TADF group offer additional channels for triplet exciton harvesting and confers faster reverse intersystem crossing (RISC) kinetics but it also acts as a steric shield, insulating the emissive MR-TADF core from aggregation-caused quenching. Two emitters, DtCzBN-CNBT1 and DtCzBN-CNBT2, demonstrate enhanced photophysical properties leading to outstanding performance of the organic light-emitting diodes (OLEDs). DtCzBN-CNBT2, containing a D-A TADF moiety, has a faster k (1.1 × 10 s) and higher photoluminescence quantum yield (Φ: 97%) compared to DtCzBN-CNBT1 (0.2 × 10 s, Φ: 90%), which contains a D-A moiety that itself is not TADF. The sensitizer-free OLEDs with DtCzBN-CNBT2 achieve a record-high maximum external quantum efficiency (EQE) of 40.2% and showed milder efficiency roll-off (EQE of 20.7%) compared to the DtCzBN-CNBT1-based devices (EQE of 37.1% and EQE of 11.9%).
本文展示了一种发射体设计的实用性和潜力,该发射体由一个窄带发射的多共振热激活延迟荧光(MR-TADF)核心组成,该核心装饰有一个能量适当更高的供体-受体TADF部分。这种供体-受体TADF基团不仅提供了额外的三重态激子捕获通道,并赋予更快的反向系间窜越(RISC)动力学,而且还起到空间屏蔽的作用,使发光的MR-TADF核心免受聚集导致的猝灭。两种发射体,DtCzBN-CNBT1和DtCzBN-CNBT2,展示出增强的光物理性质,从而使有机发光二极管(OLED)具有出色的性能。与不含TADF的供体-受体部分的DtCzBN-CNBT1(0.2×10 s,Φ:90%)相比,含有供体-受体TADF部分的DtCzBN-CNBT2具有更快的k(1.1×10 s)和更高的光致发光量子产率(Φ:97%)。采用DtCzBN-CNBT2的无敏化剂OLED实现了创纪录的40.2%的最高外量子效率(EQE),与基于DtCzBN-CNBT1的器件(EQE为37.1%和EQE为11.9%)相比,效率滚降更温和(EQE为20.7%)。