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原位碳热还原法在二硫化镍阴极中富集硫空位以高效合成过氧化氢

In Situ Carbon Thermal Reduction to Enrich Sulfur-Vacancy in Nickel Disulfide Cathode for Efficient Synthesizing Hydrogen Peroxide.

作者信息

Liu Sijia, Ren Hao, Tian Fayou, Geng Lina, Cui Wangyang, Chen Jinhui, Lin Yan, Wu Mingbo, Li Zhongtao

机构信息

State Key Laboratory of Heavy Oil Processing, College of Chemical Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China.

Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China.

出版信息

Small. 2024 Dec;20(51):e2405683. doi: 10.1002/smll.202405683. Epub 2024 Oct 13.

Abstract

Transition metal catalysts are widely used in the 2e ORR due to their cost-effectiveness. However, they often encounter issues related to low activity. Defect engineering are used on developing highly active catalysts, which can effectively modify active sites and promote electron transfer. Here, carbon-coated NiS (NiS@C), where the additional sulfur vacancies (V) is prepared induced by the carbon layer is coupled with active nickel sites. Through in situ and ex situ experiments combined with DFT calculations, it is demonstrated that the carbon layer can regulate the quantity of V in NiS. Materials with a higher concentration of V exhibit enhanced 2e ORR activity and higher HO selectivity. In situ Raman spectroscopy confirms that Ni serves as the key active site in this catalyst. DFT calculations indicate that the OOH binding energy (ΔG) decreases with an increase in the number of V, favoring the protonation of *OOH to generate HO. Upon performance testing, the average HO selectivity is 92.3%, with the highest yield reaching up to 3860 mmol gcat h. It is noteworthy that NiS@C exhibits high stability, with only a slight decrease in 2e pathway selectivity after 5000 cycles of ADT.

摘要

过渡金属催化剂因其成本效益高而被广泛应用于二电子氧还原反应(2e ORR)。然而,它们经常遇到与低活性相关的问题。缺陷工程被用于开发高活性催化剂,其可以有效地修饰活性位点并促进电子转移。在此,制备了碳包覆的硫化镍(NiS@C),其中由碳层诱导产生的额外硫空位(V)与活性镍位点相结合。通过原位和非原位实验结合密度泛函理论(DFT)计算表明,碳层可以调节NiS中V的数量。具有较高V浓度的材料表现出增强的2e ORR活性和更高的HO选择性。原位拉曼光谱证实Ni是该催化剂中的关键活性位点。DFT计算表明,OOH结合能(ΔG)随着V数量的增加而降低,有利于*OOH质子化生成HO。经性能测试,平均HO选择性为92.3%,最高产率达到3860 mmol gcat h。值得注意的是,NiS@C表现出高稳定性,在5000次加速耐久性测试(ADT)循环后,二电子途径选择性仅略有下降。

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