Porwal Shivam, Bansal Nitin Kumar, Kim Gyu-Min, Singh Trilok
Semiconductor Thin Film and Emerging Photovoltaic Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India.
Department of Chemical Engineering, Hankyong National University, 67 Seokjeong-dong, Anseong, Gyeonggi-do, 17579, South Korea.
Small. 2024 Dec;20(51):e2408168. doi: 10.1002/smll.202408168. Epub 2024 Oct 13.
In perovskite solar cells, the presence of stress and defects at interfaces promotes performance degradation and poor stability of the devices. The formation of these defects is more prominent in two-step antisolvent-free perovskite film fabrication. This study addresses these challenges by introducing guanidine sulfate (Gua-S) at the tin oxide/formamidinium lead iodide perovskite interface, fabricated without antisolvent under ambient air. Interfacial Gua-S enhanced morphology by forming bonds between uncoordinated Pb ions and I vacancies at the interface and showed improvement in the crystallinity and quality of the perovskite film. Microstructural stress analysis indicated a substantial reduction in stress, decreasing from 50.6 to 20.72 MPa with the application of Gua-S. Moreover, the Gua-S treated solar cells showed significant improvements and achieved an open circuit voltage of 1.08 V and 22.34% efficiency. Further, electrochemical impedance spectroscopic analysis showed improved built-in potential, carrier lifetime, and charge recombination lifetime for treated devices. The devices retained over 87% of the initial power conversion efficiency after 2000 hours of operation. This comprehensive study addresses the fundamental issues of interfacial stress and defects in perovskite solar cells and demonstrates the efficacy of Gua-S salt in enhancing both the structural and functional aspects of the antisolvent-free device fabrication process.
在钙钛矿太阳能电池中,界面处应力和缺陷的存在会导致器件性能下降和稳定性不佳。在两步无反溶剂钙钛矿薄膜制备过程中,这些缺陷的形成更为突出。本研究通过在氧化锡/甲脒碘化铅钙钛矿界面引入硫酸胍(Gua-S)来应对这些挑战,该制备过程是在环境空气中无反溶剂的情况下进行的。界面处的Gua-S通过在未配位的Pb离子和界面处的I空位之间形成键来改善形貌,并显示出钙钛矿薄膜的结晶度和质量有所提高。微观结构应力分析表明应力大幅降低,施加Gua-S后从50.6 MPa降至20.72 MPa。此外,经Gua-S处理的太阳能电池表现出显著改善,开路电压达到1.08 V,效率达到22.34%。此外,电化学阻抗谱分析表明,处理后的器件的内建电位、载流子寿命和电荷复合寿命均有所改善。在运行2000小时后,这些器件保留了超过87%的初始功率转换效率。这项全面的研究解决了钙钛矿太阳能电池界面应力和缺陷的基本问题,并证明了Gua-S盐在增强无反溶剂器件制造过程的结构和功能方面的功效。