Mann Dilpreet Singh, Thakur Sakshi, Sangale Sushil S, Jeong Kwang-Un, Kwon Sung-Nam, Na Seok-In
Department of Flexible and Printable Electronics and LANL-JBNU Engineering Institute-Korea, Jeonbuk National University, 567, Baekje-daero, Deokjin-gu, Jeonju-si, 54896, Republic of Korea.
Department of Polymer-Nano Science and Technology, Department of Nano Convergence Engineering, Jeonbuk National University, 567, Baekje-daero, Deokjin-gu, Jeonju-si, 54896, Republic of Korea.
Small. 2024 Dec;20(49):e2405953. doi: 10.1002/smll.202405953. Epub 2024 Sep 20.
The interface between NiO and perovskite in inverted perovskite solar cells (PSCs) is a major factor that can limit device performance due to defects and inappropriate redox reactions, which cause nonradiative recombination and decrease in open-circuit voltage (VOC). In the present study, a novel approach is used for the first time, where an amino acid (glycine (Gly), alanine (Ala), and aminobutyric acid (ABA))-complexed NiO are used as interface modifiers to eliminate defect sites and hydroxyl groups from the surface of NiO. The Ala-complexed NiO suppresses interfacial non-radiative recombination, improves the perovskite layer quality and better energy band alignment with the perovskite, resulting in improved charge transfer and reduced recombination. The incorporation of the Ala-complexed NiO leads to a PCE of 20.27% with enhanced stability under the conditions of ambient air, light soaking, and heating to 85 °C, as it retains over 82%, 85%, and 61% of its initial PCE after 1000, 500, and 350 h, respectively. The low-temperature technique also leads to the fabrication of a NiO thin film that is suitable for flexible PSCs. The Ala-complexed NiO is fabricated on the flexible substrate and achieved 17.12% efficiency while retaining 71% of initial PCE after 5,000 bending.
在倒置钙钛矿太阳能电池(PSC)中,NiO与钙钛矿之间的界面是一个主要因素,由于缺陷和不适当的氧化还原反应,它会限制器件性能,这些反应会导致非辐射复合并降低开路电压(VOC)。在本研究中,首次采用了一种新方法,即使用氨基酸(甘氨酸(Gly)、丙氨酸(Ala)和氨基丁酸(ABA))络合的NiO作为界面改性剂,以消除NiO表面的缺陷位点和羟基。Ala络合的NiO抑制了界面非辐射复合,提高了钙钛矿层质量,并与钙钛矿形成了更好的能带排列,从而改善了电荷转移并减少了复合。掺入Ala络合的NiO导致PCE为20.27%,在环境空气、光浸泡和加热至85°C的条件下稳定性增强,因为在1000、500和350小时后,它分别保留了初始PCE的82%以上、85%和61%。低温技术还导致制备出适用于柔性PSC的NiO薄膜。Ala络合的NiO在柔性基板上制备,效率达到17.12%,在5000次弯曲后保留了初始PCE的71%。