Yu Guo-Qiang, Yin Rui-Nan, Guan Ying, Tang Yi-Zhou, Sun Jing-Yan, Zhang Fei-Yu, Yang Tian-Song, Feng Qiu-Ju, Cao Yi, Ren Ting, Wu Zhuang, Zhang Liang, Li Shuai
Second Affiliated Hospital, Heilongjiang University of Chinese Medicine, Harbin 150001, China.
Academy of Traditional Chinese Medicine, Heilongjiang University of Chinese Medicine, Harbin 150040.
Zhen Ci Yan Jiu. 2024;49(9):917-923. doi: 10.13702/j.1000-0607.20230474.
To observe the effect of simulated repeated transcranial acupuncture (rTAS) on learning and memory abilities and cerebral microvascular flow in vascular dementia (VD) model rats, so as to explore the potential mechanism of rTAS in treating VD.
Thirty-two Wistar rats were randomly divided into normal, model, acupuncture and rTAS groups (=8 rats in each group). The VD model was established by permanent ligation of bilateral common carotid arteries. For rats of the acupuncture group, "Baihui" (GV20) and "Shenting" (GV24) were needled, and for rats of the rTAS group, GV20 and GV24 were stimulated by simulated repeated transcranial manipulation (200 r/min, for 5 min). The treatment was conducted once daily for 14 days. After the intervention, learning and memory abilities were evaluated using the Morris water maze test. Laser speckle technology was used to measure the average cerebral microvascular flow. ELISA was performed to measure the contents of vascular endothelial growth factor (VEGF), endothelin-1 (ET-1), nitric oxide (NO), and inducible nitric oxide synthase (iNOS) in the hippocampal tissues.
In comparison with the normal group, the escape latency of rats in the model group was prolonged (<0.01), and the times of crossing the platform were decreased (<0.01). The average cerebral microvascular flow and the VEGF content in the hippocampus were significantly decreased, while the contents of NO, iNOS, and ET-1 were significantly increased (<0.01). In comparison with the model group, the escape latency was significantly shortened (<0.01), the average cerebral microvascular flow and VEGF content in the hippocampus were significantly increased (<0.05, <0.01), while contents of iNOS were significantly decreased (<0.05, <0.01) in both acupuncture and rTAS groups;and the times of crossing the platform were increased (<0.01), the contents of NO and ET-1 in hippocampus were significantly decreased (<0.01) in the rTAS group. The effects of rTAS were significantly superior to those of acupuncture in up-regulating the average cerebral microvascular flow (<0.05) and VEGF content (<0.01), and down-regulating the NO, iNOS and ET-1 contents (<0.01, <0.05).
rTAS can increase cerebral microvascular flow, improve spatial cognition and enhance learning and memory abilities of VD rats. The underlying mechanism may be involved in promoting angiogenesis, improving endothelial function and mitigating oxidative stress.
观察模拟重复经颅针刺(rTAS)对血管性痴呆(VD)模型大鼠学习记忆能力及脑微血管血流的影响,以探讨rTAS治疗VD的潜在机制。
将32只Wistar大鼠随机分为正常组、模型组、针刺组和rTAS组,每组8只。采用永久性结扎双侧颈总动脉的方法建立VD模型。针刺组大鼠针刺“百会”(GV20)和“神庭”(GV24),rTAS组大鼠采用模拟重复经颅手法刺激GV20和GV24(200转/分钟,持续5分钟)。每天治疗1次,共14天。干预后,采用Morris水迷宫试验评估学习记忆能力。利用激光散斑技术测量脑微血管平均血流。采用酶联免疫吸附测定法(ELISA)检测海马组织中血管内皮生长因子(VEGF)、内皮素-1(ET-1)、一氧化氮(NO)和诱导型一氧化氮合酶(iNOS)的含量。
与正常组相比,模型组大鼠逃避潜伏期延长(<0.01),穿越平台次数减少(<0.01)。海马脑微血管平均血流和VEGF含量显著降低,而NO、iNOS和ET-1含量显著升高(<0.01)。与模型组相比,针刺组和rTAS组大鼠逃避潜伏期均显著缩短(<0.01),海马脑微血管平均血流和VEGF含量均显著升高(<0.05,<0.01),而iNOS含量均显著降低(<0.05,<0.01);rTAS组穿越平台次数增加(<0.01),海马组织中NO和ET-1含量显著降低(<0.01)。rTAS在上调脑微血管平均血流(<0.05)和VEGF含量(<0.01),下调NO、iNOS和ET-1含量(<0.01,<0.05)方面的效果显著优于针刺组。
rTAS可增加VD大鼠脑微血管血流,改善空间认知,增强学习记忆能力。其潜在机制可能与促进血管生成、改善内皮功能和减轻氧化应激有关。