Srinivasan Lakshman, Gazeli Kristaq, Prasanna Swaminathan, Invernizzi Laurent, Roca I Cabarrocas Pere, Lombardi Guillaume, Ouaras Karim
LPICM - CNRS, Ecole Polytechnique, Institut Polytechnique de Paris, 91128 Palaiseau, France.
IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Bd Thomas Gobert, 91120 Palaiseau, France.
J Chem Phys. 2024 Oct 21;161(15). doi: 10.1063/5.0226028.
This study presents the detailed characterization of a magnetron-based Ar-N2 plasma discharge used to sputter a liquid Ga target for the deposition of gallium nitride (GaN) thin films. By utilizing in situ diagnostic techniques including optical emission spectroscopy and microwave interferometry, we determine different temperatures (rotational and vibrational of N2 molecules, and electronic excitation of Ar atoms) and electron density, respectively. Beyond providing insights into fundamental plasma physics, our research establishes a significant correlation between gas-phase dynamics, particularly those of gallium atoms (flux and average energy at the substrate) and deposited GaN thin film properties (growth rate and crystalline fraction). These findings underscore the role of plasma conditions in enhancing thin film quality, highlighting the importance of plasma characterization in understanding and optimizing GaN thin film growth processes.
本研究详细描述了一种基于磁控管的Ar-N₂等离子体放电，该放电用于溅射液态Ga靶以沉积氮化镓（GaN）薄膜。通过利用包括光发射光谱和微波干涉测量在内的原位诊断技术，我们分别确定了不同的温度（N₂分子的转动和振动以及Ar原子的电子激发）和电子密度。除了深入了解基本的等离子体物理学外，我们的研究还建立了气相动力学之间的显著相关性，特别是镓原子的气相动力学（在衬底处的通量和平均能量）与沉积的GaN薄膜特性（生长速率和结晶分数）之间的相关性。这些发现强调了等离子体条件在提高薄膜质量方面的作用，突出了等离子体表征在理解和优化GaN薄膜生长过程中的重要性。
