Nan Bingfei, Yu Jing, Li Mengyao, Huang Chen, Chen Hongyu, Zhang Hao, Chang Cheng, Li Junshan, Song Xuan, Guo Kai, Arbiol Jordi, Cabot Andreu
Catalonia Institute for Energy Research-IREC, Sant Adrià de Besòs, Barcelona 08930, Spain; Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain.
Catalonia Institute for Energy Research-IREC, Sant Adrià de Besòs, Barcelona 08930, Spain; Catalan Institute of Nanoscience and Nanotechnology (ICN2), Campus UAB, Bellaterra, Barcelona 08193, Catalonia, Spain.
J Colloid Interface Sci. 2025 Feb;679(Pt A):910-920. doi: 10.1016/j.jcis.2024.10.035. Epub 2024 Oct 9.
Materials with low intrinsic thermal conductivity are essential for the development of high-performance thermoelectric devices. At the same time, the solution processing of these materials may enable the cost-effective production of the devices. Herein, we detail a high-yield and scalable colloidal synthesis route to produce AgSbBiSe nanocrystals (NCs) using amine-thiol-Se chemistry. The quaternary chalcogenide material is consolidated by a rapid hot-press maintaining the cubic crystalline structure. Transport measurements confirm that n-type AgSbBiSe exhibits an inherently ultralow lattice thermal conductivity of ca. 0.34 W mK at 760 K. Moreover, a modulation doping strategy based on the blending of semiconductor AgSbBiSe and metallic Sn NCs is demonstrated to control the charge carrier concentration in the final composite material. The introduction of Sn nanodomains additionally blocks phonon propagation thus contributing to reducing the thermal conductivity of the final material. Ultimately, a peak thermoelectric figure of merit value of 0.64 at 760 K is achieved for n-type AgSbBiSe-Sn nanocomposites that also demonstrate a notable Vickers hardness of 185 HV.
具有低本征热导率的材料对于高性能热电装置的开发至关重要。同时,这些材料的溶液加工可能使装置的生产具有成本效益。在此,我们详细介绍了一种高产率且可扩展的胶体合成路线,使用胺 - 硫醇 - 硒化学方法制备AgSbBiSe纳米晶体(NCs)。通过快速热压使四元硫族化物材料固结,保持立方晶体结构。输运测量证实,n型AgSbBiSe在760 K时表现出固有的超低晶格热导率,约为0.34 W mK。此外,展示了一种基于半导体AgSbBiSe和金属Sn NCs混合的调制掺杂策略,以控制最终复合材料中的载流子浓度。Sn纳米域的引入还会阻碍声子传播,从而有助于降低最终材料的热导率。最终,n型AgSbBiSe - Sn纳米复合材料在760 K时实现了0.64的峰值热电优值,同时还表现出显著的维氏硬度185 HV。