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氧化锌/熔融石英衬底中深度非均匀电导率变化引起的声电效应。

Acoustoelectric Effect due to an In-Depth Inhomogeneous Conductivity Change in ZnO/Fused Silica Substrates.

作者信息

Caliendo Cinzia, Benetti Massimiliano, Cannatà Domenico, Laidoudi Farouk

机构信息

Institute for Photonics and Nanotechnologies, IFN-CNR, Via del Fosso del Cavaliere 100, 00133 Rome, Italy.

Institute for Microelectronics and Microsystems, IMM-CNR, Via del Fosso del Cavaliere 100, 00133 Rome, Italy.

出版信息

Sensors (Basel). 2024 Oct 2;24(19):6399. doi: 10.3390/s24196399.

Abstract

The acoustoelectric (AE) effect induced by the absorption of ultraviolet (UV) light at 365 nm in piezoelectric ZnO films was theoretically and experimentally studied. c-ZnO films 4.0 µm thick were grown by the RF reactive magnetron sputtering technique onto fused silica substrates at 200 °C. A surface acoustic wave (SAW) delay line was fabricated with two split-finger Al interdigital transducers (IDTs) photolithographically implemented onto the ZnO-free surface to excite and reveal the propagation of the fundamental Rayleigh wave and its third harmonic at about 39 and 104 MHz. A small area of a few square millimeters on the surface of the ZnO layer, in between the two IDTs, was illuminated by UV light at different light power values (from about 10 mW up to 1.2 W) through the back surface of the SiO substrate, which is optically transparent. The UV absorption caused a change of the ZnO electrical conductivity, which in turn affected the velocity and insertion loss (IL) of the two waves. It was experimentally observed that the phase velocity of the fundamental and third harmonic waves decreased with an increase in the UV power, while the IL vs. UV power behavior differed at large UV power values: the Rayleigh wave underwent a single peak in attenuation, while its third harmonic underwent a further peak. A two-dimensional finite element study was performed to simulate the waves IL and phase velocity vs. the ZnO electrical conductivity, under the assumption that the ZnO layer conductivity undergoes an in-depth inhomogeneous change according to an exponential decay law, with a penetration depth of 325 nm. The theoretical results predicted single- and double-peak IL behavior for the fundamental and harmonic wave due to volume conductivity changes, as opposed to the AE effect induced by surface conductivity changes for which a single-peak IL behavior is expected. The phenomena predicted by the theoretical models were confirmed by the experimental results.

摘要

对压电ZnO薄膜在365nm紫外光吸收所诱导的声电(AE)效应进行了理论和实验研究。通过射频反应磁控溅射技术在200℃下将4.0μm厚的c-ZnO薄膜生长在熔融石英衬底上。利用光刻技术在无ZnO表面制作了带有两个分裂指状铝叉指换能器(IDT)的表面声波(SAW)延迟线,以激发并揭示约39MHz和104MHz的基波瑞利波及其三次谐波的传播。通过光学透明的SiO衬底背面,用不同光功率值(从约10mW到1.2W)的紫外光照射ZnO层表面位于两个IDT之间的几平方毫米的小区域。紫外光吸收导致ZnO电导率发生变化,进而影响这两种波的速度和插入损耗(IL)。实验观察到,基波和三次谐波的相速度随紫外光功率的增加而降低,而在大紫外光功率值下,IL与紫外光功率的关系有所不同:瑞利波在衰减中出现一个单峰,而其三次谐波出现另一个峰。进行了二维有限元研究,以模拟在假设ZnO层电导率根据指数衰减定律发生深度不均匀变化且穿透深度为325nm的情况下,波的IL和相速度与ZnO电导率的关系。理论结果预测,由于体电导率变化,基波和谐波会出现单峰和双峰IL行为,这与表面电导率变化所诱导的AE效应预期的单峰IL行为相反。理论模型预测的现象得到了实验结果的证实。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/25ef/11479318/0803f086922f/sensors-24-06399-g001.jpg

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