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与λ/5000纳米波导的定向耦合

Directional Coupling to a λ/5000 Nanowaveguide.

作者信息

Tuniz Alessandro, Garattoni Sabrina, Cheng Han-Hao, Della Valle Giuseppe

机构信息

Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW 2070, Australia.

Institute of Photonics and Optical Science (IPOS), School of Physics, The University of Sydney, Camperdown, NSW 2006, Australia.

出版信息

ACS Nano. 2024 Nov 5;18(44):30626-30637. doi: 10.1021/acsnano.4c09434. Epub 2024 Oct 21.

DOI:10.1021/acsnano.4c09434
PMID:39433463
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11544933/
Abstract

Silicon-based microdevices are considered promising candidates for consolidating several terahertz technologies into a common and practical platform. The practicality stems from the relatively low loss, device compactness, ease of fabrication, and wide range of available passive and active functionalities. Nevertheless, typical device footprints are limited by diffraction to several hundreds of micrometers, which hinders emerging nanoscale applications at terahertz frequencies. While metallic gap modes provide nanoscale terahertz confinement, efficiently coupling to them is difficult. Here, we present and experimentally demonstrate a strategy for efficiently interfacing subterahertz radiation (λ = 1 mm) to a waveguide formed by a nanogap, etched in a gold film, that is 200 nm (λ/5000) wide and up to 4.5 mm long. The design principle relies on phase matching dielectric and nanogap waveguide modes, resulting in efficient directional coupling between them when they are placed side-by-side. Broadband far-field terahertz transmission experiments through the dielectric waveguide reveal a transmission dip near the designed wavelength due to resonant coupling. Near-field measurements on the surface of the gold layer confirm that such a dip is accompanied by a transfer of power to the nanogap, with an estimated coupling efficiency of ∼10%. Our approach efficiently interfaces millimeter waves with nanoscale waveguides in a tailored and controllable manner, with important implications for on-chip nanospectroscopy, telecommunications, and quantum technologies.

摘要

硅基微器件被认为是将多种太赫兹技术整合到一个通用且实用平台的有前途的候选者。其实用性源于相对较低的损耗、器件紧凑性、易于制造以及广泛的可用无源和有源功能。然而,典型器件的尺寸受衍射限制,只能达到几百微米,这阻碍了太赫兹频率下新兴的纳米级应用。虽然金属间隙模式提供了纳米级的太赫兹限制,但与之有效耦合却很困难。在此,我们提出并通过实验证明了一种策略,可将亚太赫兹辐射(λ = 1毫米)有效地耦合到由纳米间隙形成的波导中,该纳米间隙蚀刻在金膜中,宽度为200纳米(λ/5000),长度可达4.5毫米。设计原理依赖于介电和纳米间隙波导模式的相位匹配,当它们并排放置时,可实现它们之间的有效定向耦合。通过介电波导的宽带远场太赫兹传输实验表明,由于共振耦合,在设计波长附近出现传输凹陷。在金层表面的近场测量证实,这种凹陷伴随着功率转移到纳米间隙,估计耦合效率约为10%。我们的方法以定制和可控的方式有效地将毫米波与纳米级波导耦合,对片上纳米光谱学、电信和量子技术具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/d9e2afa0ee96/nn4c09434_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/30f0b8c4829f/nn4c09434_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/7d8afb359c93/nn4c09434_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/6298c1e097e1/nn4c09434_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/7d5c4faeeac7/nn4c09434_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/d4f151baa016/nn4c09434_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/d9e2afa0ee96/nn4c09434_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/30f0b8c4829f/nn4c09434_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/7d8afb359c93/nn4c09434_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/6298c1e097e1/nn4c09434_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/7d5c4faeeac7/nn4c09434_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/d4f151baa016/nn4c09434_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d8fd/11544933/d9e2afa0ee96/nn4c09434_0006.jpg

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本文引用的文献

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