Das Sarthak, Huang Ding, Verzhbitskiy Ivan A, Ooi Zi-En, Lau Chit Siong, Lee Rainer, Wong Calvin Pei Yu, Goh Kuan Eng Johnson
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
Quantum Innovation Centre (Q.InC), Agency for Science Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.
ACS Nano. 2024 Nov 5;18(44):30805-30815. doi: 10.1021/acsnano.4c11080. Epub 2024 Oct 22.
Excitons are key to the optoelectronic applications of van der Waals semiconductors, with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation remains challenging due to inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic electrical control of valley polarization in charged excitonic states of monolayer tungsten disulfide, achieving up to a 6-fold increase in the degree of circular polarization under off-resonant excitation. In contrast to the weak direct tuning of excitons typically observed using electrical gating, the charged exciton photoluminescence remains stable, even with increased scattering from electron doping. By exciting at the exciton resonances, we observed the reproducible nonmonotonic switching of the charged state population as the electron doping is varied under gate bias, indicating a resonant interplay between neutral and charged exciton states.
激子对于范德华半导体的光电子应用至关重要,具有对特性进行多功能按需调谐的潜力。然而,由于其固有的电荷中性以及电掺杂引起的额外损耗通道,对激子进行电学操控仍然具有挑战性。我们展示了单层二硫化钨带电激子态中谷极化的动态电学控制,在非共振激发下实现了圆偏振度高达6倍的增加。与通常使用电门控观察到的激子微弱直接调谐不同,即使电子掺杂导致散射增加,带电激子光致发光仍保持稳定。通过在激子共振处激发,我们观察到在栅极偏压下随着电子掺杂变化,带电态载流子出现可重复的非单调切换,这表明中性和带电激子态之间存在共振相互作用。