Vetokhina V, Nepomniashchaia N, de Prado E, Pacherova O, Kocourek T, Anandakrishnan S S, Bai Y, Dejneka A, Tyunina M
Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic.
Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu P. O. Box 4500 FI-90014 Oulu Finland
Mater Adv. 2024 Oct 15;5(22):8901-8908. doi: 10.1039/d4ma00396a. eCollection 2024 Nov 11.
The ability to tailor the electronic band structure and optical absorption by appropriate cationic substitution in perovskite oxide ferroelectrics is essential for many advanced electronic and optoelectronic applications of these materials. Here, we explored weak (Ba,Ni)-doping for reducing optical bandgaps in (K,Na)NbO ferroelectric films and ceramics. The optical absorption in the broad spectral range of (0.7-8.8) eV was investigated in polycrystalline doped, pure, and oxygen deficient films, in doped epitaxial films grown on different substrates, and in doped ceramics. By comparing optical properties of all films and ceramics, it was established that 1-2 at% of cationic substitutions or up to 10 at % of oxygen vacancies have no detectable effect on the direct (∼4.5 eV) and indirect (∼3.9 eV) gaps. Concurrently, substantial sub-gap absorption was revealed and ascribed to structural band tailing in epitaxial films and ceramics. It was suggested that owing to fundamental strain-property couplings in perovskite oxide ferroelectrics, inhomogeneities of lattice strain can lead to increased sub-gap absorption. The uncovered structurally induced sub-gap optical absorption can be relevant for other ferroelectric ceramics and thin films as well as for related perovskite oxides.
通过在钙钛矿氧化物铁电体中进行适当的阳离子取代来调整电子能带结构和光吸收的能力,对于这些材料的许多先进电子和光电子应用至关重要。在此,我们探索了通过弱(Ba,Ni)掺杂来降低(K,Na)NbO铁电薄膜和陶瓷的光学带隙。研究了多晶掺杂、纯态和缺氧薄膜、在不同衬底上生长的掺杂外延薄膜以及掺杂陶瓷在(0.7 - 8.8)eV宽光谱范围内的光吸收。通过比较所有薄膜和陶瓷的光学性质,确定1 - 2原子百分比的阳离子取代或高达10原子百分比的氧空位对直接(约4.5 eV)和间接(约3.9 eV)带隙没有可检测到的影响。同时,揭示了大量的亚带隙吸收,并将其归因于外延薄膜和陶瓷中的结构带尾。有人提出,由于钙钛矿氧化物铁电体中基本的应变 - 性质耦合,晶格应变的不均匀性会导致亚带隙吸收增加。所发现的结构诱导亚带隙光吸收可能与其他铁电陶瓷和薄膜以及相关的钙钛矿氧化物有关。