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基于深度神经网络的双功能宽带吸波器。

Deep neural network-enabled dual-functional wideband absorbers.

作者信息

Li Jing, Ma BinYi, Chen Huanyang, Cai Rui, Chen SiMing, Wu Qiannan, Li Mengwei

机构信息

School of Instrument and Electronics, North University of China, Taiyuan, 030051, China.

Department of Physics, Xiamen University, Xiamen, 361000, China.

出版信息

Sci Rep. 2024 Oct 24;14(1):25159. doi: 10.1038/s41598-024-75705-6.

Abstract

The increasing interest in switchable and tunable wideband perfect absorbers for applications such as modulation, energy harvesting, and spectroscopy has significantly driven research efforts. In this study, we present a dual-function terahertz (THz) metamaterial absorber supported by deep neural networks (DNN). This absorber achieves dual-wideband perfect absorption through the use of graphene and vanadium dioxide (VO₂), enabling both switching and tuning functionalities. Simulation results show that, in the insulating phase of VO₂, a high-frequency wideband absorption ranging from 9.31 to 9.77 THz is achieved, with an absorption rate exceeding 90%. In contrast, in the metallic phase of VO₂, a full-band wideband absorption above 90% is observed from 8.44 to 9.75 THz. The corresponding fractional bandwidths are 61.3% and 174.6%, respectively. Additionally, electrical tuning of graphene's Fermi level from 0.01 to 1 eV enables continuous modulation of absorption intensity between 48 and 100%. The absorber also exhibits polarization insensitivity to TE and TM waves due to its symmetric design and broad incidence angle. This design holds significant potential for various THz applications, including switching, electromagnetic shielding, stealth technology, filtering, and sensing.

摘要

对可切换和可调谐宽带完美吸收体在调制、能量收集和光谱学等应用方面日益增长的兴趣,极大地推动了相关研究工作。在本研究中,我们展示了一种由深度神经网络(DNN)支持的双功能太赫兹(THz)超材料吸收体。该吸收体通过使用石墨烯和二氧化钒(VO₂)实现了双宽带完美吸收,具备切换和调谐功能。仿真结果表明,在VO₂的绝缘相中,实现了9.31至9.77 THz的高频宽带吸收,吸收率超过90%。相比之下,在VO₂的金属相中,在8.44至9.75 THz范围内观察到全频段宽带吸收率高于90%。相应的分数带宽分别为61.3%和174.6%。此外,将石墨烯的费米能级从0.01 eV电调谐至1 eV可实现吸收强度在48%至100%之间的连续调制

。由于其对称设计和宽入射角,该吸收体对TE波和TM波还表现出极化不敏感性。这种设计在包括切换、电磁屏蔽、隐身技术、滤波和传感在内的各种太赫兹应用中具有巨大潜力。

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