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溴化铊半导体的载流子输运特性与晶体质量的比较

Comparison between carrier transport property and crystal quality of TlBr semiconductors.

作者信息

Watanabe Kenichi, Sugai Yusuke, Hasegawa Sota, Tanaka Seishiro, Hitomi Keitaro, Nogami Mitsuhiro, Shinohara Takenao, Su Yuhua, Parker Joseph Don, Kockelmann Winfried

机构信息

Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan.

Department of Quantum Science and Energy Engineering, Tohoku University, Aoba, Sendai, Aoba-ku, Aramaki, 980-8579, Japan.

出版信息

Sci Rep. 2024 Oct 24;14(1):25224. doi: 10.1038/s41598-024-76005-9.

DOI:10.1038/s41598-024-76005-9
PMID:39448771
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11502793/
Abstract

Thallium bromide (TlBr) semiconductor detectors are being developed as promising candidates for high-detection-efficiency, high-energy-resolution, and room-temperature gamma-ray spectrometers. This study presents methods for evaluating TlBr crystal quality and carrier transport characteristics using neutron Bragg-dip imaging and the time-of-flight method for pulsed-laser-induced carriers, respectively. Neutron Bragg-dip imaging effectively determines the crystal orientation distribution, revealing crystal imperfections and grain boundaries. Time-of-flight measurements provide a spatial distribution of carrier mobility. In this study, two samples obtained from both the upstream and downstream region in the crystal ingot were evaluated. Although both samples show similar crystal quality, the upstream sample showed high carrier mobility across all areas, whereas the downstream sample exhibits low mobility in some areas. These findings suggest that, at least within the range of carrier mobility currently obtained, the effect of crystal integrity on carrier mobility is less significant than that of impurities. In conclusion, combining neutron Bragg-dip imaging with carrier mobility measurements offers a comprehensive approach to evaluating and improving TlBr detectors.

摘要

溴化铊（TlBr）半导体探测器正在被开发成为高探测效率、高能量分辨率和室温伽马射线光谱仪的有前景的候选者。本研究分别介绍了使用中子布拉格凹陷成像和脉冲激光诱导载流子的飞行时间方法来评估TlBr晶体质量和载流子传输特性的方法。中子布拉格凹陷成像有效地确定了晶体取向分布，揭示了晶体缺陷和晶界。飞行时间测量提供了载流子迁移率的空间分布。在本研究中，对从晶体锭的上游和下游区域获得的两个样品进行了评估。虽然两个样品显示出相似的晶体质量，但上游样品在所有区域都显示出高载流子迁移率，而下游样品在某些区域表现出低迁移率。这些发现表明，至少在目前获得的载流子迁移率范围内，晶体完整性对载流子迁移率的影响不如杂质的影响显著。总之，将中子布拉格凹陷成像与载流子迁移率测量相结合，为评估和改进TlBr探测器提供了一种全面的方法。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/d722ecbdbe73/41598_2024_76005_Fig12_HTML.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/d722ecbdbe73/41598_2024_76005_Fig12_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/f189fffb1cb3/41598_2024_76005_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/efce39ab9afa/41598_2024_76005_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/59782e02185c/41598_2024_76005_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/22ddb30bee18/41598_2024_76005_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/70e740b30d8b/41598_2024_76005_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/41c2ae9ddca7/41598_2024_76005_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/5eb80fe2cd09/41598_2024_76005_Fig7_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/4d2164009578/41598_2024_76005_Fig8_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/35f4fc05b941/41598_2024_76005_Fig9_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/48a3a7e883df/41598_2024_76005_Fig10_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/7bbec308948a/41598_2024_76005_Fig11_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1092/11502793/d722ecbdbe73/41598_2024_76005_Fig12_HTML.jpg

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本文引用的文献

1
The energy-resolved neutron imaging system, RADEN.能量分辨中子成像系统，RADEN。
Rev Sci Instrum. 2020 Apr 1;91(4):043302. doi: 10.1063/1.5136034.