Sidorov Fedor, Rogozhin Alexander
Valiev Institute of Physics and Technology of Russian Academy of Sciences, Moscow 117218, Russia.
Polymers (Basel). 2024 Oct 12;16(20):2880. doi: 10.3390/polym16202880.
This paper presents a detailed physical model for a novel method of two- and three-dimensional microstructure formation: dry electron beam etching of the resist (DEBER). This method is based on the electron-beam induced thermal depolymerization of positive resist, and its advantages include high throughput and relative simplicity compared to other microstructuring techniques. However, the exact mechanism of profile formation in DEBER has been unclear until now, hindering the optimization of this technique for certain applications. The developed model takes into account the major DEBER phenomena: e-beam scattering in resist and substrate, e-beam induced main-chain scissions of resist molecules, thermal depolymerization of resist, monomer diffusion, and resist reflow. Based on the developed model, a simulation algorithm was implemented, which allowed simulation of the profile obtained in resist by DEBER. Experimental verification of the DEBER model was carried out, which demonstrated the reliability of the model and its applicability for theoretical study of this method. The ultimate DEBER characteristics were estimated by simulation. The minimum line width and the maximum profile slope that could be obtained by DEBER were approximately 300 nm and 70°, respectively.
抗蚀剂的干式电子束蚀刻（DEBER）。该方法基于电子束诱导的正性抗蚀剂热解聚，与其他微结构化技术相比，其优点包括高产量和相对简单。然而，直到现在，DEBER中轮廓形成的确切机制仍不清楚，这阻碍了该技术在某些应用中的优化。所开发的模型考虑了主要的DEBER现象：抗蚀剂和衬底中的电子束散射、电子束诱导的抗蚀剂分子主链断裂、抗蚀剂的热解聚、单体扩散和抗蚀剂回流。基于所开发的模型，实现了一种模拟算法，该算法能够模拟DEBER在抗蚀剂中获得的轮廓。对DEBER模型进行了实验验证，证明了该模型的可靠性及其在该方法理论研究中的适用性。通过模拟估算了DEBER的极限特性。DEBER能够获得的最小线宽和最大轮廓斜率分别约为300 nm和70°。
