Sharma Vikash, Kumar Nitish, Sharma Sumit, Singh Pushpapraj, Gupta Ankur, Das Samaresh
Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India.
Nanotechnology. 2024 Nov 7;36(4). doi: 10.1088/1361-6528/ad8bce.
In this paper, the phototransistor behavior is investigated in the germanium-on-insulator (GeOI)-based junctionless nanowire (JL-NW) transistor under various light conditions. High responsivity and photosensitivity are attributed in the fully depleted regime within the visible and near-infrared bands. The impact of light is also investigated in detail on the electronic and transfer characteristics such as energy bandgap, carrier distribution, electrostatic potential, electric field, generation and recombination rates. Further, the channel doping and thickness are tuned to optimize the optical responsivity. The significant tunability of responsivity is observed with increasing channel thickness. The device exhibits fast optical switching performance, which is further enhanced at higher input light power. Overall, at the nanoscale dimension, our proposed phototransistor demonstrates better detectivity with a significantly smaller illumination area. Thus, the GeOI-based JL-NW phototransistors can be used for imaging (visible wavelength range) and bioimaging (near-infrared wavelength range) applications in advanced technology nodes.
在本文中，研究了绝缘体上锗（GeOI）基无结纳米线（JL-NW）晶体管在各种光照条件下的光电晶体管行为。在可见光和近红外波段的完全耗尽区域内，实现了高响应度和高灵敏度。还详细研究了光对能带隙、载流子分布、静电势、电场、产生和复合率等电子和传输特性的影响。此外，通过调整沟道掺杂和厚度来优化光学响应度。随着沟道厚度的增加，观察到响应度具有显著的可调性。该器件表现出快速的光开关性能，在更高的输入光功率下进一步增强。总体而言，在纳米尺度上，我们提出的光电晶体管在显著更小的照明面积下展现出更好的探测能力。因此，基于GeOI的JL-NW光电晶体管可用于先进技术节点中的成像（可见光波长范围）和生物成像（近红外波长范围）应用。
