Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan.
Department of Engineering and System Science, National Tsing Hua University, Section 2 Kuang Fu Road, Hsinchu 30013, Taiwan ; Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, 1001, Ta Hsueh Road, Hsinchu 30013, Taiwan.
Nanoscale Res Lett. 2014 Aug 13;9(1):392. doi: 10.1186/1556-276X-9-392. eCollection 2014.
The high temperature dependence of junctionless (JL) gate-all-around (GAA) poly-Si thin-film transistors (TFTs) with 2-nm-thick nanosheet channel is compared with that of JL planar TFTs. The variation of SS with temperature for JL GAA TFTs is close to the theoretical value (0.2 mV/dec/K), owing to the oxidation process to form a 2-nm-thick channel. The bandgap of 1.35 eV in JL GAA TFTs by fitting experimental data exhibits the quantum confinement effect, indicating greater suppression of Ioff than that in JL planar TFTs. The measured [Formula: see text] of -1.34 mV/°C in JL GAA nanosheet TFTs has smaller temperature dependence than that of -5.01 mV/°C in JL planar TFTs.
与平面结型场效应晶体管（JL 平面 TFT）相比，研究了具有 2nm 厚纳米片沟道的无结（JL）全环绕栅（GAA）多晶硅薄膜晶体管（TFT）的高温依赖性。由于氧化过程形成 2nm 厚的沟道，因此 JL GAA TFT 的 SS 随温度的变化接近理论值（0.2 mV/dec/K）。通过拟合实验数据，JL GAA TFT 的能带隙为 1.35eV，表现出量子限制效应，表明 Ioff 的抑制作用大于 JL 平面 TFT。在 JL GAA 纳米片 TFT 中，实测的[公式：见文本]为-1.34 mV/°C，其温度依赖性小于 JL 平面 TFT 的-5.01 mV/°C。
