Ramos Maria, Ahmed Tanweer, Tu Bao Q, Chatzikyriakou Eleni, Olano-Vegas Lucía, Martín-García Beatriz, Calvo M Reyes, Tsirkin Stepan S, Souza Ivo, Casanova Félix, de Juan Fernando, Gobbi Marco, Hueso Luis E
CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain.
Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain.
Nano Lett. 2024 Nov 20;24(46):14728-14735. doi: 10.1021/acs.nanolett.4c03944. Epub 2024 Oct 29.
The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of ∼1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other noncentrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices.
体光伏效应（BPVE）为突破当前太阳能电池技术的效率限制提供了一条很有前景的途径。然而，区分光电流的本征和非本征贡献仍然是一项重大挑战。在此，我们基于原子级薄的ReS制备了高质量的横向器件，其接触电阻极小，为区分本征体光伏信号与源自界面效应的其他非本征光电流贡献提供了一个理想平台。我们的器件展现出了较大的体光伏性能，在可见光范围内本征响应度约为1 mA/W，无需诸如应变工程等外部调节旋钮。我们的实验结果得到了理论计算的支持。此外，我们的方法可以外推至研究其他非中心对称范德华材料中的本征BPVE，为新一代高效光捕获器件铺平道路。
