Direct Observation of the Band Gap Transition in Atomically Thin ReS.

ReS is considered as a promising candidate for novel electronic and sensor applications. The low crystal symmetry of this van der Waals compound leads to a highly anisotropic optical, vibrational, and transport behavior. However, the details of the electronic band structure of this fascinating material are still largely unexplored. We present a momentum-resolved study of the electronic structure of monolayer, bilayer, and bulk ReS using k-space photoemission microscopy in combination with first-principles calculations. We demonstrate that the valence electrons in bulk ReS are-contrary to assumptions in recent literature-significantly delocalized across the van der Waals gap. Furthermore, we directly observe the evolution of the valence band dispersion as a function of the number of layers, revealing the transition from an indirect band gap in bulk ReS to a direct gap in the bilayer and the monolayer. We also find a significantly increased effective hole mass in single-layer crystals. Our results establish bilayer ReS as an advantageous building block for two-dimensional devices and van der Waals heterostructures.