• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

非中心对称二维单晶的生长

Growth of Noncentrosymmetric Two-Dimensional Single Crystals.

作者信息

Cui Guoliang, Qi Jiajie, Liang Zhihua, Zeng Fankai, Zhang Xiaowen, Xu Xiaozhi, Liu Kaihui

机构信息

Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou 510631, China.

Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510631, China.

出版信息

Precis Chem. 2024 Apr 5;2(7):330-354. doi: 10.1021/prechem.3c00122. eCollection 2024 Jul 22.

DOI:10.1021/prechem.3c00122
PMID:39473902
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11504158/
Abstract

Among the various two-dimensional (2D) materials, more than 99% of them are noncentrosymmetric. However, since the commonly used substrates are generally centrosymmetric, antiparallel islands are usually inevitable in the growth of noncentrosymmetric 2D materials because of the energetic equivalency of these two kinds of antiparallel islands on centrosymmetric substrates. Therefore, achieving the growth of noncentrosymmetric 2D single crystals has long been a great challenge compared with the centrosymmetric ones like graphene. In this review, we presented the remarkable efforts and progress in the past decade, through precise chemical processes. We first discussed the great challenge and possible strategies in the growth of noncentrosymmetric 2D single crystals. Then, we focused on the advancements made in producing representative noncentrosymmetric 2D single crystals, including hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDs), and other noncentrosymmetric 2D materials. At last, we summarized and looked forward to future research on the growth of layer-, stacking-, and twist-controlled noncentrosymmetric 2D single crystals and their heterostructures.

摘要

在各种二维(2D)材料中,超过99%是无中心对称的。然而,由于常用的衬底通常是中心对称的,在中心对称衬底上生长无中心对称二维材料时,由于这两种反平行岛的能量等效性,反平行岛通常是不可避免的。因此,与石墨烯等中心对称二维材料相比,实现无中心对称二维单晶的生长长期以来一直是一个巨大的挑战。在这篇综述中,我们介绍了过去十年通过精确化学过程所做出的显著努力和取得的进展。我们首先讨论了无中心对称二维单晶生长中的巨大挑战和可能的策略。然后,我们重点介绍了在制备代表性无中心对称二维单晶方面取得的进展,包括六方氮化硼(hBN)、过渡金属二硫属化物(TMDs)以及其他无中心对称二维材料。最后,我们总结并展望了未来关于层控、堆叠控和扭曲控无中心对称二维单晶及其异质结构生长的研究。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/b1c366d055f0/pc3c00122_0023.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/be7d4206fc88/pc3c00122_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/39891a8d4ba8/pc3c00122_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/8b0310ff381f/pc3c00122_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/081563011f9d/pc3c00122_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/fd3dd1fa3030/pc3c00122_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/66d1f4122886/pc3c00122_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/8d37cb07a048/pc3c00122_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/2fd1b08cd086/pc3c00122_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/4e0449086652/pc3c00122_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/85ace11cbb2b/pc3c00122_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/9c0ed7c91798/pc3c00122_0011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/d807d2f67f32/pc3c00122_0012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/acc04d7a0612/pc3c00122_0013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/3708723c4c59/pc3c00122_0014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/0eb8d4eac171/pc3c00122_0015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/d5c32adccb5c/pc3c00122_0016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/cbef2869559f/pc3c00122_0017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/8affdeaf798b/pc3c00122_0018.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/4a24a0bb5403/pc3c00122_0019.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/3abdfed77e8c/pc3c00122_0020.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/438db85a4ec6/pc3c00122_0021.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/f81052c4c265/pc3c00122_0022.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/b1c366d055f0/pc3c00122_0023.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/be7d4206fc88/pc3c00122_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/39891a8d4ba8/pc3c00122_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/8b0310ff381f/pc3c00122_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/081563011f9d/pc3c00122_0004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/fd3dd1fa3030/pc3c00122_0005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/66d1f4122886/pc3c00122_0006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/8d37cb07a048/pc3c00122_0007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/2fd1b08cd086/pc3c00122_0008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/4e0449086652/pc3c00122_0009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/85ace11cbb2b/pc3c00122_0010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/9c0ed7c91798/pc3c00122_0011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/d807d2f67f32/pc3c00122_0012.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/acc04d7a0612/pc3c00122_0013.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/3708723c4c59/pc3c00122_0014.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/0eb8d4eac171/pc3c00122_0015.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/d5c32adccb5c/pc3c00122_0016.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/cbef2869559f/pc3c00122_0017.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/8affdeaf798b/pc3c00122_0018.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/4a24a0bb5403/pc3c00122_0019.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/3abdfed77e8c/pc3c00122_0020.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/438db85a4ec6/pc3c00122_0021.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/f81052c4c265/pc3c00122_0022.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c32e/11504158/b1c366d055f0/pc3c00122_0023.jpg

相似文献

1
Growth of Noncentrosymmetric Two-Dimensional Single Crystals.非中心对称二维单晶的生长
Precis Chem. 2024 Apr 5;2(7):330-354. doi: 10.1021/prechem.3c00122. eCollection 2024 Jul 22.
2
Transition metal dichalcogenides and beyond: synthesis, properties, and applications of single- and few-layer nanosheets.过渡金属二卤化物及其以外的单层和少层纳米片的合成、性质和应用。
Acc Chem Res. 2015 Jan 20;48(1):56-64. doi: 10.1021/ar5002846. Epub 2014 Dec 9.
3
Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides.非中心对称二维单晶金属二卤代物的普遍外延生长。
Nat Commun. 2023 Feb 3;14(1):592. doi: 10.1038/s41467-023-36286-6.
4
Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper.在铜上外延生长出 100 平方厘米的单晶六方氮化硼单层。
Nature. 2019 Jun;570(7759):91-95. doi: 10.1038/s41586-019-1226-z. Epub 2019 May 22.
5
Homoepitaxy of Boron Nitride on Exfoliated Hexagonal Boron Nitride Flakes.六方氮化硼薄片上氮化硼的同质外延生长
Nano Lett. 2024 Jun 12;24(23):6990-6996. doi: 10.1021/acs.nanolett.4c01310. Epub 2024 May 31.
6
Two-dimensional heterostructures: fabrication, characterization, and application.二维异质结构:制备、表征及应用。
Nanoscale. 2014 Nov 7;6(21):12250-72. doi: 10.1039/c4nr03435j.
7
Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics.六方氮化硼异质结构的合成及其在二维范德华电子学中的应用。
Chem Soc Rev. 2018 Aug 13;47(16):6342-6369. doi: 10.1039/c8cs00450a.
8
Three-dimensional spirals of atomic layered MoS2.原子层状 MoS2 的三维螺旋。
Nano Lett. 2014 Nov 12;14(11):6418-23. doi: 10.1021/nl502961e. Epub 2014 Oct 28.
9
Growth of two-dimensional materials on hexagonal boron nitride (h-BN).二维材料在六方氮化硼(h-BN)上的生长。
Nanotechnology. 2019 Jan 18;30(3):034003. doi: 10.1088/1361-6528/aaeb70. Epub 2018 Nov 16.
10
Creating a Nanospace under an h-BN Cover for Adlayer Growth on Nickel(111).在 h-BN 覆盖层下创建纳米空间,用于镍(111)上的吸附层生长。
ACS Nano. 2015 Dec 22;9(12):11589-98. doi: 10.1021/acsnano.5b05509. Epub 2015 Oct 12.

引用本文的文献

1
Unravelling the Epitaxial Growth Mechanism of Hexagonal and Nanoporous Boron Nitride: A First-Principles Microkinetic Model.揭示六方氮化硼和纳米多孔氮化硼的外延生长机制:第一性原理微观动力学模型
Small. 2025 Mar;21(10):e2405404. doi: 10.1002/smll.202405404. Epub 2025 Jan 5.

本文引用的文献

1
Low-Temperature Centimeter-Scale Growth of Layered 2D SnS for Piezoelectric Kirigami Devices.用于压电折纸器件的层状二维SnS的低温厘米级生长
ACS Nano. 2023 Oct 24;17(20):20680-20688. doi: 10.1021/acsnano.3c08826. Epub 2023 Oct 13.
2
Stamped production of single-crystal hexagonal boron nitride monolayers on various insulating substrates.在各种绝缘衬底上压印生产单晶六方氮化硼单层。
Nat Commun. 2023 Oct 12;14(1):6421. doi: 10.1038/s41467-023-42270-x.
3
A Universal Strategy for Synthesis of 2D Ternary Transition Metal Phosphorous Chalcogenides.
二维三元过渡金属磷硫属化合物合成的通用策略。
Adv Mater. 2024 Jan;36(3):e2307237. doi: 10.1002/adma.202307237. Epub 2023 Dec 3.
4
Stack growth of wafer-scale van der Waals superconductor heterostructures.晶圆级范德华超导体异质结构的堆叠生长。
Nature. 2023 Sep;621(7979):499-505. doi: 10.1038/s41586-023-06404-x. Epub 2023 Sep 6.
5
Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer.通过无残留转移实现过渡金属二硫属化物场效应晶体管中的低欧姆接触电阻和高开关比。
Nat Nanotechnol. 2024 Jan;19(1):34-43. doi: 10.1038/s41565-023-01497-x. Epub 2023 Sep 4.
6
Stacking-Controlled Growth of rBN Crystalline Films with High Nonlinear Optical Conversion Efficiency up to 1.具有高达1的高非线性光学转换效率的rBN晶体薄膜的堆叠控制生长
Adv Mater. 2024 Mar;36(11):e2303122. doi: 10.1002/adma.202303122. Epub 2023 Dec 20.
7
Step engineering for nucleation and domain orientation control in WSe epitaxy on c-plane sapphire.用于在c面蓝宝石上进行WSe外延生长时成核和畴取向控制的台阶工程
Nat Nanotechnol. 2023 Nov;18(11):1295-1302. doi: 10.1038/s41565-023-01456-6. Epub 2023 Jul 27.
8
Low-temperature growth of MoS on polymer and thin glass substrates for flexible electronics.用于柔性电子器件的聚合物和薄玻璃基板上MoS的低温生长。
Nat Nanotechnol. 2023 Dec;18(12):1439-1447. doi: 10.1038/s41565-023-01460-w. Epub 2023 Jul 27.
9
Oriented lateral growth of two-dimensional materials on c-plane sapphire.二维材料在c面蓝宝石上的定向横向生长。
Nat Nanotechnol. 2023 Nov;18(11):1289-1294. doi: 10.1038/s41565-023-01445-9. Epub 2023 Jul 20.
10
Signatures of fractional quantum anomalous Hall states in twisted MoTe.扭曲的 MoTe 中分数量子反常霍尔态的特征。
Nature. 2023 Oct;622(7981):63-68. doi: 10.1038/s41586-023-06289-w. Epub 2023 Jun 14.