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静电约束对LaAlO₃/SrTiO₃界面处圆顶形超导相图的影响。

Effect of electrostatic confinement on the dome-shaped superconducting phase diagram at the LaAlO/SrTiO interface.

作者信息

Wójcik Paweł, Szafran Bartłomiej, Czarnecki Julian, Citro Roberta, Zegrodnik Michał

机构信息

Faculty of Physics and Applied Computer Science, AGH University of Krakow, Al. Mickiewicza 30, 30-059, Krakow, Poland.

Department of Physics E. R. Caianiello, University of Salerno and CNR-SPIN, Via Giovanni Paolo II 132, Fisciano, SA, Italy.

出版信息

Sci Rep. 2024 Oct 30;14(1):26177. doi: 10.1038/s41598-024-77460-0.

Abstract

The two-dimensional electron gas (2DEG) at the LaAlO[Formula: see text]/SrTiO[Formula: see text] (LAO/STO) interface exhibits gate-tunable superconductivity with a dome-like shape of critical temperature as a function of electron concentration. This behavior has not been unambiguously explained yet. Here, we develop a microscopic model based on the Schrödinger-Poisson approach to determine the electronic structure of the LAO/STO 2DEG, which we then apply to study the principal characteristics of the superconducting phase within the real-space pairing mean-field approach. For the electron concentrations reported in the experiment, we successfully reproduce the dome-like shape of the superconducting gap. According to our analysis such behavior results from the interplay between the Fermi surface topology and the gap symmetry, with the dominant extended s-wave contribution. Similarly as in the experimental report, we observe a bifurcation effect in the superconducting gap dependence on the electron density when the 2DEG is electrostatically doped either with the top gate or the bottom gate. Our findings explains the dome-shaped phase diagram of the considered heterostucture with good agreement with the experimental data which, in turn, strongly suggest the appearance of the extended s-wave symmetry of the gap in 2DEG at the LAO/STO interface.

摘要

在LaAlO₃/SrTiO₃(LAO/STO)界面处的二维电子气(2DEG)表现出门控可调超导性,其临界温度呈现出穹顶状,是电子浓度的函数。这种行为尚未得到明确解释。在此,我们基于薛定谔 - 泊松方法开发了一个微观模型,以确定LAO/STO二维电子气的电子结构,然后将其应用于在实空间配对平均场方法内研究超导相的主要特征。对于实验中报道的电子浓度,我们成功再现了超导能隙的穹顶状。根据我们的分析,这种行为源于费米面拓扑结构与能隙对称性之间的相互作用,主要贡献为扩展的s波。与实验报告类似,当通过顶栅或底栅对二维电子气进行静电掺杂时,我们观察到超导能隙对电子密度的依赖性存在分岔效应。我们的研究结果解释了所考虑异质结构的穹顶状相图,与实验数据吻合良好,这反过来有力地表明在LAO/STO界面处二维电子气中能隙存在扩展的s波对称性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2c2c/11525793/ac34d7bf4f81/41598_2024_77460_Fig1_HTML.jpg

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