Zhang Liangzhu, Xing Shucheng, He Tian, Wu Wei-Bin, Zhang An-Lei, Guo Zhoubin, Das Pratteek, Zheng Shuanghao, Ge Jun-Yi, Feng Xinliang, Sun Zhimei, Wu Zhong-Shuai
State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, China.
School of Materials Science and Engineering, East China University of Science and Technology, Shanghai, 200237, China.
Adv Mater. 2025 Jan;37(1):e2411765. doi: 10.1002/adma.202411765. Epub 2024 Nov 2.
The rapid development of low energy dissipation spintronic devices has stimulated the search for air-stable 2D nanomaterials possessing room-temperature ferromagnetism. Here the experimental realization of 2D MoB nanosheets is reported with intrinsic room-temperature ferromagnetic characteristics by vacancy engineering. These nanosheets are synthesized by etching the bulk MAB phase (MoY)AlB into MoB nanosheets in ZnCl molten salt. The MoB nanosheets show robust intrinsic ferromagnetic properties, with a saturation magnetic moment of 0.044 emu g at 300 K, while vacancy-free MoB MBene exhibits paramagnetism. It is elucidated that the Mo-vacancy defect generates large density of states near the Fermi surface and spontaneously spin-split bands through first-principles calculations, which contributes to the non-zero magnetic moment in MoB nanosheets. This work lays the groundwork for activating the magnetic properties of MBene nanosheets by vacancy engineering, offering the possibilities for development of practical spintronic devices.
低能耗自旋电子器件的快速发展激发了人们对具有室温铁磁性的空气稳定二维纳米材料的探索。本文报道了通过空位工程实现具有本征室温铁磁特性的二维MoB纳米片。这些纳米片是通过在ZnCl熔盐中将块状MAB相（MoY）AlB蚀刻成MoB纳米片而合成的。MoB纳米片表现出强大的本征铁磁性能，在300 K时饱和磁矩为0.044 emu g，而无空位的MoB MBene表现出顺磁性。通过第一性原理计算表明，Mo空位缺陷在费米表面附近产生了大的态密度，并自发地使能带自旋分裂，这导致了MoB纳米片中非零磁矩的产生。这项工作为空位工程激活MBene纳米片的磁性奠定了基础，为实用自旋电子器件的发展提供了可能性。
