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通过铁电薄膜中类似外在Dzyaloshinskii-Moriya的挠曲电效应实现极性斯格明子拓扑态的机械书写

Mechanical Writing of Polar Skyrmionic Topological States via Extrinsic Dzyaloshinskii-Moriya-like Flexoelectricity in Ferroelectric Thin Films.

作者信息

Kasai Kohta, Nojima Takashi, Wang Yu, Xu Tao, Hirakata Hiroyuki, Shimada Takahiro

机构信息

Department of Mechanical Engineering and Science, Kyoto University, Kyoto Daigaku-katsura, Nishikyo-ku, Kyoto 615-8540, Japan.

Department of Mechanics, School of Civil Engineering, Central South University, Changsha 410083, China.

出版信息

ACS Nano. 2024 Nov 26;18(47):32451-32457. doi: 10.1021/acsnano.4c06137. Epub 2024 Nov 14.

Abstract

Exploring complex topological structures in condensed matter has shown promising applications in nanotechnology. Although polar topologies such as chiral vortices and skyrmions have been observed in ferroelectric heterostructures, their existence in simple systems has posed challenges due to the absence of intrinsic noncollinear interaction (like Dzyaloshinskii-Moriya interaction in ferromagnetics). Here, we demonstrate that a nanoindentation mechanically switches local polarizations to stable polar topologies, including skyrmions, within a room-temperature PbTiO thin film via the flexoelectric effect as a noncollinear (Dzyaloshinskii-Moriya-like) driving force using phase-field simulations. In addition, by moving the indenter, the continuous polarization switching leads to the "writing" of arbitrary polar patterns (such as donut-like skyrmionium). Furthermore, the written topologies can be "erased" by applying a voltage with the same conducted indenter. Therefore, this study shows the writing and erasing process of room-temperature polar topologies in a ferroelectric thin film, which significantly advances their potential applications.

摘要

在凝聚态物质中探索复杂的拓扑结构已在纳米技术中展现出广阔的应用前景。尽管诸如手性涡旋和斯格明子等极性拓扑结构已在铁电异质结构中被观测到,但由于缺乏本征非共线相互作用(如铁磁体中的Dzyaloshinskii-Moriya相互作用),它们在简单系统中的存在一直是个挑战。在此,我们通过相场模拟表明,纳米压痕可通过挠曲电效应作为非共线(类Dzyaloshinskii-Moriya)驱动力,在室温PbTiO薄膜内将局部极化机械切换为包括斯格明子在内的稳定极性拓扑结构。此外,通过移动压头,连续的极化切换可实现任意极性图案(如甜甜圈状斯格明子团)的“写入”。再者,施加与压入时相同的电压可“擦除”已写入的拓扑结构。因此,本研究展示了铁电薄膜中室温极性拓扑结构的写入和擦除过程,这极大地推动了它们的潜在应用。

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