Sanket Kumar, Kumar Uttam, Sinha Indrajit, Behera Shantanu K
Department of Ceramic Engineering, National Institute of Technology, Rourkela, Odisha, 769008, India.
Department of Chemistry, Indian Institute of Technology (Banaras Hindu University), Varanasi, Uttar Pradesh, 221005, India.
Dalton Trans. 2025 Jan 2;54(2):797-810. doi: 10.1039/d4dt02688h.
This work integrates a unique porous carbon with a binary heterostructured NiFeO/CuWO composite to enhance electrocatalytic activity towards the oxygen evolution reaction. The NiFeO/CuWO binary heterostructure was prepared through the conventional co-precipitation method. The porous carbon with turbostratic order was obtained by the selective etching of SiO nanodomains from preceramic polymer-derived SiOC. Finally, an optimum ternary NiFeO/CuWO/C composite was prepared through hydrothermal treatment. Microstructural findings reveal that NiFeO/CuWO nanocomposite particulates are distributed homogeneously within the porous carbon matrix. Electrochemical findings reveal that the optimum composite with uniform carbon distribution requires an overpotential of 360 mV to attain a current density of 10 mA cm with the lowest Tafel slope of 43 mV dec as opposed to 450 mV and 55 mV dec, respectively, for the composites without carbon. The ternary composite demonstrated a stable potential over a prolonged period of 24 hours with enhanced mass activity. The improved electrocatalytic efficiency of the material is attributed to the presence of graphitic carbon and ample porosity within the additive carbon phase, which enhances the catalyst-electrolyte interaction interface area and electronic conductivity.
这项工作将一种独特的多孔碳与二元异质结构的NiFeO/CuWO复合材料相结合,以提高对析氧反应的电催化活性。NiFeO/CuWO二元异质结构通过传统的共沉淀法制备。通过从陶瓷前体聚合物衍生的SiOC中选择性蚀刻SiO纳米域,获得了具有乱层有序结构的多孔碳。最后,通过水热处理制备了最佳的三元NiFeO/CuWO/C复合材料。微观结构研究结果表明,NiFeO/CuWO纳米复合颗粒均匀分布在多孔碳基质中。电化学研究结果表明,具有均匀碳分布的最佳复合材料在电流密度为10 mA cm时需要360 mV的过电位,Tafel斜率最低为43 mV dec,而无碳复合材料分别需要450 mV和55 mV dec。三元复合材料在24小时的长时间内表现出稳定的电位,且质量活性增强。该材料电催化效率的提高归因于添加碳相中存在石墨碳和充足的孔隙率,这增加了催化剂-电解质相互作用界面面积和电子导电性。