Oh Yeon-Wha, Kim Hoon, Do Lee-Mi, Baek Kyu-Ha, Kang Il-Suk, Lee Ga-Won, Kang Chan-Mo
Division of Nano Convergence Technology Development, Nantional NanoFAB Center Daejeon 34141 South Korea.
Dept. of Electronics Engineering, Chungnam National University Daejeon 34134 South Korea
RSC Adv. 2024 Nov 22;14(50):37438-37444. doi: 10.1039/d4ra06855f. eCollection 2024 Nov 19.
In this study, we report rapid activation of a solution-processed aluminum oxide gate dielectric film to reduce its processing time under ambient atmosphere. Aluminum precursor films were exposed to a high energy light-pulse and completely converted into dielectric films within 30 seconds (450 pulses). The aluminum oxide gate dielectric film irradiated using intense pulsed light with 450 pulses exhibits a smooth surface and a leakage current density of less than 10 A cm at 2 MV cm. Moreover, dielectric constants of the aluminum oxide layer were calculated to be approximately 7. Finally, we fabricated a solution-processed indium gallium zinc oxide thin-film transistor with AlO using intense pulsed light irradiation, exhibiting a field-effect mobility of 2.99 cm V s, threshold voltage of 0.73 V, subthreshold swing of 180 mV per decade and / ratio of 3.9 × 10.
在本研究中，我们报告了一种溶液处理的氧化铝栅极介电膜的快速激活，以减少其在环境气氛下的处理时间。铝前驱体膜暴露于高能光脉冲下，并在30秒内（450个脉冲）完全转化为介电膜。使用450个脉冲的强脉冲光辐照的氧化铝栅极介电膜具有光滑的表面，在2 MV/cm下的漏电流密度小于10 A/cm²。此外，计算得出氧化铝层的介电常数约为7。最后，我们使用强脉冲光辐照制备了一种带有AlO的溶液处理铟镓锌氧化物薄膜晶体管，其场效应迁移率为2.99 cm²/V·s，阈值电压为0.73 V，亚阈值摆幅为每十倍频程180 mV，Ion/Ioff比为3.9×10⁷。
