Jauhari Inas M, Bak Yang-Gyu, Noviyana Imas, Putri Maryane A, Lee Jung-A, Heo Young-Woo, Lee Hee Young
School of Materials Science and Engineering, Yeungnam University, Gyeongsan, 38541, Korea.
School of Materials Science and Engineering, Kyungpook National University, Daegu, 41566, Korea.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1748-1753. doi: 10.1166/jnn.2021.18924.
High- Y₂O₃ thin films were investigated as the gate dielectric for amorphous indium zinc tin oxide (IZTO) thin-film transistors (TFTs). Y₂O₃ gate dielectric was deposited by radio frequency magnetron sputtering (RF-MS) under various working pressures and annealing conditions. Amorphous IZTO TFTs with SiO₂ as the gate dielectric showed a high field-effect mobility (μ) of 19.6 cm²/Vs, threshold voltage () of 0.75 V, on/off current ratio (/) of 2.0×106, and subthreshold swing (SS) value of 1.01 V/dec. The IZTO TFT sample device fabricated with the Y₂O₃ gate dielectric showed an improved subthreshold swing value compared to that of the IZTO TFT device with SiO₂ gate dielectric. The IZTO TFT device using the Y₂O₃ gate dielectric deposited at a working pressure of 5 mtorr and annealed at 400 °C in 6 sccm O₂ for 1 hour showed a high μ of 51.8 cm²/Vs, of -0.26 V, / of 6.0×10³, and SS value of 0.19 V/dec. With the application of a Y₂O₃ gate dielectric, the shift improved under a positive bias stress (PBS) but was relatively unaffected by negative bias stress (NBS). These shifts were attributed to charge traps within the gate dielectric and/or interfaces between the channel and gate dielectric layer.
研究了高Y₂O₃薄膜作为非晶铟锌锡氧化物（IZTO）薄膜晶体管（TFT）的栅极电介质。通过射频磁控溅射（RF-MS）在各种工作压力和退火条件下沉积Y₂O₃栅极电介质。以SiO₂作为栅极电介质的非晶IZTO TFT表现出19.6 cm²/Vs的高场效应迁移率（μ）、0.75 V的阈值电压（）、2.0×10⁶的开/关电流比（/）以及1.01 V/dec的亚阈值摆幅（SS）值。与采用SiO₂栅极电介质的IZTO TFT器件相比，采用Y₂O₃栅极电介质制造的IZTO TFT样品器件的亚阈值摆幅值有所改善。使用在5 mtorr工作压力下沉积并在6 sccm O₂中于400 °C退火1小时的Y₂O₃栅极电介质的IZTO TFT器件表现出51.8 cm²/Vs的高μ、-0.26 V的、6.0×10³的/以及0.19 V/dec的SS值。随着Y₂O₃栅极电介质的应用，在正偏压应力（PBS）下阈值电压漂移得到改善，但受负偏压应力（NBS）的影响相对较小。这些漂移归因于栅极电介质内和/或沟道与栅极电介质层之间界面处的电荷陷阱。
