He Keke, Bian Mengying, Seddon Samuel D, Jagadish Koushik, Mucchietto Andrea, Ren He, Kirstein Erik, Asadi Reza, Bai Jaeil, Yao Chao, Pan Sheng, Yu Jie-Xiang, Milde Peter, Huai Chang, Hui Haolei, Zang Jiadong, Sabirianov Renat, Cheng Xuemei M, Miao Guoxing, Xing Hui, Shao Yu-Tsun, Crooker Scott A, Eng Lukas, Hou Yanglong, Bird Jonathan P, Zeng Hao
Department of Physics, University at Buffalo, The State University of New York, Buffalo, NY, 14226, USA.
Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14226, USA.
Adv Sci (Weinh). 2025 Jan;12(2):e2407625. doi: 10.1002/advs.202407625. Epub 2024 Nov 25.
Covalent 2D magnets such as CrTe, which feature self-intercalated magnetic cations located between monolayers of transition-metal dichalcogenide material, offer a unique platform for controlling magnetic order and spin texture, enabling new potential applications for spintronic devices. Here, it is demonstrated that the unconventional anomalous Hall effect (AHE) in CrTe, characterized by additional humps and dips near the coercive field in AHE hysteresis, originates from an intrinsic mechanism dictated by the self-intercalation. This mechanism is distinctly different from previously proposed mechanisms such as topological Hall effect, or two-channel AHE arising from spatial inhomogeneities. Crucially, multiple Weyl-like nodes emerge in the electronic band structure due to strong spin-orbit coupling, whose positions relative to the Fermi level is sensitively modulated by the canting angles of the self-intercalated Cr cations. These nodes contribute strongly to the Berry curvature and AHE conductivity. This component competes with the contribution from bands that are less affected by the self-intercalation, resulting in a sign change in AHE with temperature and the emergence of additional humps and dips. The findings provide compelling evidence for the intrinsic origin of the unconventional AHE in CrTe and further establish self-intercalation as a control knob for engineering AHE in complex magnets.
诸如CrTe之类的共价二维磁体,其特征是自嵌入的磁性阳离子位于过渡金属二硫属化物材料的单分子层之间,为控制磁序和自旋纹理提供了一个独特的平台,为自旋电子器件带来了新的潜在应用。在此,研究表明CrTe中非常规反常霍尔效应(AHE),其特征是在AHE磁滞回线的矫顽场附近有额外的峰谷,源于由自嵌入决定的内在机制。该机制与先前提出的机制明显不同,例如拓扑霍尔效应或由空间不均匀性引起的双通道AHE。至关重要的是,由于强自旋轨道耦合,在电子能带结构中出现了多个类似外尔点的节点,其相对于费米能级的位置由自嵌入的Cr阳离子的倾斜角敏感地调制。这些节点对贝里曲率和AHE电导率有很大贡献。该分量与受自嵌入影响较小的能带的贡献相互竞争,导致AHE随温度出现符号变化以及额外峰谷的出现。这些发现为CrTe中非常规AHE的内在起源提供了令人信服的证据,并进一步将自嵌入确立为在复杂磁体中设计AHE的控制旋钮。