Hayashi Y, Okamura Y, Kanazawa N, Yu T, Koretsune T, Arita R, Tsukazaki A, Ichikawa M, Kawasaki M, Tokura Y, Takahashi Y
Department of Applied Physics and Quantum Phase Electronics Centre, University of Tokyo, Tokyo, Japan.
Deparment of Physics, Tohoku University, Sendai, Japan.
Nat Commun. 2021 Oct 13;12(1):5974. doi: 10.1038/s41467-021-25276-1.
Physics of Weyl electrons has been attracting considerable interests and further accelerated by recent discoveries of giant anomalous Hall effect (AHE) and topological Hall effect (THE) in several magnetic systems including non-coplanar magnets with spin chirality or small-size skyrmions. These AHEs/THEs are often attributed to the intense Berry curvature generated around the Weyl nodes accompanied by band anti-crossings, yet the direct experimental evidence still remains elusive. Here, we demonstrate an essential role of the band anti-crossing for the giant AHE and THE in MnGe thin film by using the terahertz magneto-optical spectroscopy. The low-energy resonance structures around ~ 1.2 meV in the optical Hall conductivity show the enhanced AHE and THE, indicating the emergence of at least two distinct anti-crossings near the Fermi level. The theoretical analysis demonstrates that the competition of these resonances with opposite signs is a cause of the strong temperature and magnetic-field dependences of observed DC Hall conductivity. These results lead to the comprehensive understanding of the interplay among the transport phenomena, optical responses and electronic/spin structures.
外尔电子物理学一直备受关注,并且由于近期在包括具有自旋手性的非共面磁体或小尺寸斯格明子等几种磁性系统中发现了巨大反常霍尔效应(AHE)和拓扑霍尔效应(THE)而进一步加速。这些反常霍尔效应/拓扑霍尔效应通常归因于外尔节点周围伴随着能带反交叉产生的强烈贝里曲率,然而直接的实验证据仍然难以捉摸。在这里,我们通过太赫兹磁光光谱法证明了能带反交叉在MnGe薄膜中的巨大反常霍尔效应和拓扑霍尔效应中起着至关重要的作用。光学霍尔电导率中约1.2 meV处的低能共振结构显示出增强的反常霍尔效应和拓扑霍尔效应,表明在费米能级附近出现了至少两个不同的反交叉。理论分析表明,这些具有相反符号的共振之间的竞争是观察到的直流霍尔电导率强烈依赖于温度和磁场的原因。这些结果有助于全面理解输运现象、光学响应与电子/自旋结构之间的相互作用。