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使用合成聚季铵盐整平剂的铜柱电镀及其对SAC305/Cu焊点空洞的耦合效应

Cu Pillar Electroplating Using a Synthetic Polyquaterntum Leveler and Its Coupling Effect on SAC305/Cu Solder Joint Voiding.

作者信息

Li Wenjie, Li Zhe, Zeng Fang-Yuan, Zhang Qi, Guo Liwei, Li Dan, Ma Yong-Hui, Liu Zhi-Quan

机构信息

Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China.

School of Material Science and Chemical Engineering, Harbin University of Science and Technology, Harbin 150040, China.

出版信息

Materials (Basel). 2024 Nov 5;17(22):5405. doi: 10.3390/ma17225405.

Abstract

With the advancement of high-integration and high-density interconnection in chip manufacturing and packaging, Cu bumping technology in wafer- and panel- level packaging is developed to micrometer-sized structures and pitches to accommodate increased I/O numbers on high-end integrated circuits. Driven by this industrial demand, significant efforts have been dedicated to Cu electroplating techniques for improved pillar shape control and solder joint reliability, which substantially depend on additive formulations and electroplating parameters that regulate the growth morphology, crystal structure, and impurity incorporation in the process of electrodeposition. It is necessary to investigate the effect of an additive on Cu pillar electrodeposition, and to explore the Kirkendall voids formed during the reflowing process, which may result from the additive-induced impurity in the electrodeposited Cu pillars. In this work, a self-synthesized polyquaterntum (PQ) was made out with dual suppressor and leveler effects, and was combined with prototypical accelerator bis- (sodium sulfopropyl)-disulfide (SPS) for patterned Cu pillar electroplating. Then, Sn96.5/Ag3.0/Cu0.5 (SAC305) solder paste were screen printed on electroplated Cu pillars and undergo reflow soldering. Kirkendall voids formed at the joint interfaces were observed and quantified by SEM. Finally, XRD, and EBSD were employed to characterize the microstructure under varying conditions. The results indicate that PQ exhibits significant suppressive and levelled properties with the new structure of both leveler and suppressor. However, its effectiveness is dependent on liquid convection. PQ and SPS work synergistically, influencing the polarization effect in various convective environments. Consequently, uneven adsorption occurs on the surface of the Cu pillars, which results in more Kirkendall voids at the corners than at the center along the Cu pillar surface.

摘要

随着芯片制造和封装中高集成度和高密度互连技术的发展,晶圆级和面板级封装中的铜凸块技术已发展到微米级结构和间距,以适应高端集成电路上不断增加的输入/输出数量。受此行业需求驱动,人们在铜电镀技术方面投入了大量精力,以改善柱状结构控制和焊点可靠性,这在很大程度上取决于添加剂配方和电镀参数,这些参数在电沉积过程中调节生长形态、晶体结构和杂质掺入。有必要研究添加剂对铜柱电沉积的影响,并探索回流过程中形成的柯肯达尔空洞,这可能是由电沉积铜柱中添加剂诱导的杂质导致的。在这项工作中,制备了一种具有双重抑制和整平作用的自合成聚季铵盐(PQ),并将其与典型的促进剂双(磺丙基)二硫化物(SPS)结合用于图案化铜柱电镀。然后,将Sn96.5/Ag3.0/Cu0.5(SAC305)焊膏丝网印刷在电镀铜柱上并进行回流焊接。通过扫描电子显微镜(SEM)观察并量化在接头界面处形成的柯肯达尔空洞。最后,采用X射线衍射(XRD)和电子背散射衍射(EBSD)来表征不同条件下的微观结构。结果表明,PQ具有新型的整平剂和抑制剂结构,表现出显著的抑制和整平性能。然而,其有效性取决于液体对流。PQ和SPS协同作用,在各种对流环境中影响极化效应。因此,在铜柱表面发生不均匀吸附,导致沿铜柱表面角落处的柯肯达尔空洞比中心处更多。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c1df/11595773/823468352d22/materials-17-05405-g001.jpg

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