Mei Haixia, Zhang Fuyun, Zhou Tingting, Zhang Tong
Key Lab Intelligent Rehabil & Barrier Free Disable (Ministry of Education), Changchun University, Changchun 130022, China.
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
Sensors (Basel). 2024 Nov 9;24(22):7188. doi: 10.3390/s24227188.
As the mainstream type of gas sensors, metal oxide semiconductor (MOS) gas sensors have garnered widespread attention due to their high sensitivity, fast response time, broad detection spectrum, long lifetime, low cost, and simple structure. However, the high power consumption due to the high operating temperature limits its application in some application scenarios such as mobile and wearable devices. At the same time, highly sensitive and low-power gas sensors are becoming more necessary and indispensable in response to the growth of the environmental problems and development of miniaturized sensing technologies. In this work, hierarchical indium oxide (InO) sensing materials were designed and the pulse-driven microelectromechanical system (MEMS) gas sensors were also fabricated. The hierarchical InO assembled with the mass of nanosheets possess abundant accessible active sites. In addition, compared with the traditional direct current (DC) heating mode, the pulse-driven MEMS sensor appears to have the higher sensitivity for the detection of low-concentrations of nitrogen dioxide (NO). The limit of detection (LOD) is as low as 100 ppb. It is worth mentioning that the average power consumption of the sensor is as low as 0.075 mW which is one three-hundredth of that in the DC heating mode. The enhanced sensing performances are attributed to loose and porous structures and the reducing desorption of the target gas driven by pulse heating. The combination of morphology design and pulse-driven strategy makes the MEMS sensors highly attractive for portable equipment and wearable devices.
作为气体传感器的主流类型，金属氧化物半导体（MOS）气体传感器因其高灵敏度、快速响应时间、宽检测光谱、长寿命、低成本和简单结构而受到广泛关注。然而，由于高工作温度导致的高功耗限制了其在移动和可穿戴设备等一些应用场景中的应用。同时，随着环境问题的增加和小型化传感技术的发展，高灵敏度和低功耗的气体传感器变得越来越必要和不可或缺。在这项工作中，设计了分级氧化铟（InO）传感材料，并制造了脉冲驱动的微机电系统（MEMS）气体传感器。由大量纳米片组装而成的分级InO具有丰富的可及活性位点。此外，与传统的直流（DC）加热模式相比，脉冲驱动的MEMS传感器在检测低浓度二氧化氮（NO）时似乎具有更高的灵敏度。检测限（LOD）低至100 ppb。值得一提的是，该传感器的平均功耗低至0.075 mW，仅为直流加热模式下的三百分之一。增强的传感性能归因于松散多孔的结构以及脉冲加热驱动的目标气体的减少解吸。形态设计和脉冲驱动策略的结合使得MEMS传感器对便携式设备和可穿戴设备具有高度吸引力。
