Pulse-Driven MEMS NO Sensors Based on Hierarchical InO Nanostructures for Sensitive and Ultra-Low Power Detection.

As the mainstream type of gas sensors, metal oxide semiconductor (MOS) gas sensors have garnered widespread attention due to their high sensitivity, fast response time, broad detection spectrum, long lifetime, low cost, and simple structure. However, the high power consumption due to the high operating temperature limits its application in some application scenarios such as mobile and wearable devices. At the same time, highly sensitive and low-power gas sensors are becoming more necessary and indispensable in response to the growth of the environmental problems and development of miniaturized sensing technologies. In this work, hierarchical indium oxide (InO) sensing materials were designed and the pulse-driven microelectromechanical system (MEMS) gas sensors were also fabricated. The hierarchical InO assembled with the mass of nanosheets possess abundant accessible active sites. In addition, compared with the traditional direct current (DC) heating mode, the pulse-driven MEMS sensor appears to have the higher sensitivity for the detection of low-concentrations of nitrogen dioxide (NO). The limit of detection (LOD) is as low as 100 ppb. It is worth mentioning that the average power consumption of the sensor is as low as 0.075 mW which is one three-hundredth of that in the DC heating mode. The enhanced sensing performances are attributed to loose and porous structures and the reducing desorption of the target gas driven by pulse heating. The combination of morphology design and pulse-driven strategy makes the MEMS sensors highly attractive for portable equipment and wearable devices.