Cho Minhyun, Datta Biswajit, Han Kwanghee, Chand Saroj B, Adak Pratap Chandra, Yu Sichao, Li Fengping, Watanabe Kenji, Taniguchi Takashi, Hone James, Jung Jeil, Grosso Gabriele, Kim Young Duck, Menon Vinod M
Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea.
Department of Physics, City College of New York, New York, New York 10031, United States.
Nano Lett. 2025 Jan 29;25(4):1381-1388. doi: 10.1021/acs.nanolett.4c04996. Epub 2024 Dec 2.
Twisted hexagonal boron nitride (thBN) exhibits ferroelectricity due to moiré superlattices with AB/BA domains. These domains possess electric dipoles, leading to a periodic electrostatic potential that can be imprinted onto other materials placed in its proximity. Here we demonstrate the remote imprinting of moiré patterns from thBN onto monolayer MoSe and investigate the changes in the exciton properties. We confirm the imprinted moiré patterns on monolayer MoSe using Kelvin probe force microscopy (KPFM) and hyperspectral photoluminescence (PL) mapping. By creating a large ferroelectric domain (∼8.7 μm), we achieve unprecedented potential modulation (∼387 ± 52 meV). We observe the formation of exciton-polarons by the ferroelectric moiré domains and investigate the optical property changes induced by the moiré pattern in monolayer MoSe by varying the moiré domain size down to ∼110 nm. Our findings highlight the potential of thBN as a platform for controlling the properties of 2D materials for optoelectronic and valleytronic applications.
扭曲的六方氮化硼（thBN）由于具有AB/BA畴的莫尔超晶格而表现出铁电性。这些畴具有电偶极子，导致周期性静电势，该电势可被印刻到放置在其附近的其他材料上。在此，我们展示了从thBN到单层MoSe的莫尔图案的远程印刻，并研究了激子特性的变化。我们使用开尔文探针力显微镜（KPFM）和高光谱光致发光（PL）映射确认了单层MoSe上的印刻莫尔图案。通过创建一个大的铁电畴（约8.7μm），我们实现了前所未有的电势调制（约387±52 meV）。我们观察到铁电莫尔畴形成了激子极化子，并通过将莫尔畴尺寸减小到约110 nm来研究单层MoSe中莫尔图案引起的光学性质变化。我们的研究结果突出了thBN作为控制二维材料用于光电子和谷电子学应用特性的平台的潜力。
