Yang Jin, Zha Jianhao, Mao Qinan, Yang Heyi, Pei Lang, Zhong Jiasong
Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China.
Inorg Chem. 2024 Dec 16;63(50):23999-24007. doi: 10.1021/acs.inorgchem.4c04393. Epub 2024 Dec 3.
Indoor plant cultivation has been receiving increased attention due to concerns about sustainable agricultural production. Phosphor-converted light-emitting diodes (pc-LEDs) offer substantial promise as lighting solutions for regulating plant growth. However, the quest for high-performance phosphors with precise responsiveness to far-red phytochromes poses a challenge. Our study proposes a chemical substitution strategy to develop near-infrared (NIR) phosphors, YAlGa(BO):Cr. Benefiting from Ga replacement of Al, a red shift in the NIR emission of YAlGa(BO):Cr is realized to attain a good alignment with far-red phytochrome absorption centering at 730 nm. The optimized YAlGa(BO):Cr exhibits a favorable quantum yield of 71.8% and robust thermal stability of 101.0%@423 K, owing to local structural distortion and thermal repopulation caused by Ga incorporation. The fabricated pc-LED combined with the phosphor yields an NIR output power of 40.9 mW and a photoelectric conversion efficiency of 15.4% at 100 mA. Plant growth experiments demonstrate that under NIR illumination from the devices, the average lengths of pea roots and stems gain 127 and 225% promotion, respectively, further highlighting the potential of YAlGa(BO):Cr phosphors for applications in plant cultivation.
由于对可持续农业生产的关注，室内植物栽培越来越受到重视。磷光转换发光二极管（pc-LED）作为调节植物生长的照明解决方案具有很大的前景。然而，寻求对远红光植物色素具有精确响应的高性能磷光体是一项挑战。我们的研究提出了一种化学替代策略来开发近红外（NIR）磷光体YAlGa(BO):Cr。受益于用Ga替代Al，实现了YAlGa(BO):Cr近红外发射的红移，以与以730 nm为中心的远红光植物色素吸收良好匹配。优化后的YAlGa(BO):Cr表现出71.8%的良好量子产率和在423 K时101.0%的强大热稳定性，这归因于Ga掺入引起的局部结构畸变和热再填充。制造的结合该磷光体的pc-LED在100 mA时产生40.9 mW的近红外输出功率和15.4%的光电转换效率。植物生长实验表明，在来自这些器件的近红外光照下，豌豆根和茎的平均长度分别增长了127%和225%，进一步突出了YAlGa(BO):Cr磷光体在植物栽培应用中的潜力。
