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铁磁赫斯勒合金CoMnAl基磁性三层膜中的大自旋霍尔效应和电流感应磁化翻转

Large Spin Hall Efficiency and Current-Induced Magnetization Switching in Ferromagnetic Heusler Alloy CoMnAl-Based Magnetic Trilayers.

作者信息

Wang Mingzhi, Pan Chang, Xie Nian, Qiu Xuepeng, Li Yufei, Lang Lili, Wang Shiqiang, Cheng Dashuai, Fan Weijia, Zhou Shi-Ming, Shi Zhong

机构信息

Shanghai Key Laboratory of Special Artificial Microstructure Materials and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

出版信息

Adv Sci (Weinh). 2024 Dec 4;12(4):e2407171. doi: 10.1002/advs.202407171.

Abstract

The spin Hall efficiency (ξ) is a crucial parameter that evaluates the charge-to-spin conversion capability of a material, and thus materials with higher ξ are highly desirable in spin-orbit torque (SOT) devices. Recent studies have highlighted the use of ferromagnetic materials as robust spin sources, paving the way for the development of more efficient SOT devices. To accelerate this innovation, it is essential to pursue ferromagnetic materials of high ξ. Here the experimental observation of a large spin Hall efficiency is reported in ferromagnetic Heusler alloy CoMnAl (CMA)-based magnetic trilayers. Utilizing the current-induced hysteresis loop shift technique, the spin Hall efficiency is determined to be 0.077 for the B2-phase and 0.029 for the disordered CMA. Notably, magnetization switching both with and without the application of an external auxiliary magnetic field were achieved in these trilayers. The enhancement of ξ is attributed to the formation of chemical ordering in CMA. These findings provide new avenues for the development of ferromagnet-based SOT devices.

摘要

自旋霍尔效率(ξ)是评估材料电荷到自旋转换能力的关键参数,因此,具有较高ξ值的材料在自旋轨道矩(SOT)器件中备受青睐。最近的研究强调了使用铁磁材料作为强大的自旋源,为开发更高效的SOT器件铺平了道路。为了加速这一创新,追求具有高ξ值的铁磁材料至关重要。本文报道了在基于铁磁休斯勒合金CoMnAl(CMA)的磁性三层膜中对大自旋霍尔效率的实验观察。利用电流诱导的磁滞回线位移技术,确定B2相的自旋霍尔效率为0.077,无序CMA的自旋霍尔效率为0.029。值得注意的是,在这些三层膜中,无论是否施加外部辅助磁场,都实现了磁化翻转。ξ值的提高归因于CMA中化学有序的形成。这些发现为基于铁磁体的SOT器件的发展提供了新途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7239/12121694/fa3f6cfe7891/ADVS-12-2407171-g002.jpg

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