Yang Yifei, Lee Seungjun, Chen Yu-Chia, Jia Qi, Dixit Brahmdutta, Sousa Duarte, Odlyzko Michael, Garcia-Barriocanal Javier, Yu Guichuan, Haugstad Greg, Fan Yihong, Huang Yu-Han, Lyu Deyuan, Cresswell Zach, Liang Shuang, Benally Onri Jay, Low Tony, Wang Jian-Ping
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
Characterization Facility, University of Minnesota, Minneapolis, MN, 55455, USA.
Adv Mater. 2025 Aug;37(32):e2416763. doi: 10.1002/adma.202416763. Epub 2025 May 15.
Spin-orbit torque (SOT) offers an efficient mechanism for manipulating the magnetization of ferromagnetic materials in spintronics-based memory and logic devices. However, conventional SOT materials, such as heavy metals and topological insulators, are limited by high crystal symmetry to generating and injecting only in-plane spins into the ferromagnet. Low-symmetry materials and symmetry-breaking strategies have been employed to generate unconventional spin currents with out-of-plane spin polarization, enabling field-free deterministic switching of perpendicular magnetization. Despite this progress, the SOT efficiency of these materials has typically remained low. Here, a large SOT efficiency of 0.3 in the bulk NiW at room temperature is reported, as evaluated by second harmonic Hall measurements. In addition, due to the low crystal symmetry of NiW, unconventional SOT from the out-of-plane and Dresselhaus-like spin components are observed. Notably, a large SOT efficiency of 0.73 is observed in W/NiW (5 nm), potentially resulting from additional interfacial contributions or extrinsic effects. Furthermore, field-free switching of perpendicular magnetization has been achieved using the multi-directional SOT of NiW, highlighting its potential as a low-symmetry SOT material for energy-efficient spintronic devices.
自旋轨道扭矩(SOT)为基于自旋电子学的存储器和逻辑器件中操纵铁磁材料的磁化提供了一种有效机制。然而,传统的SOT材料,如重金属和拓扑绝缘体,受限于高晶体对称性,只能向铁磁体中产生和注入面内自旋。低对称性材料和对称破缺策略已被用于产生具有面外自旋极化的非常规自旋电流,从而实现垂直磁化的无场确定性切换。尽管取得了这一进展,但这些材料的SOT效率通常仍然很低。在此,通过二次谐波霍尔测量评估,报道了室温下块状NiW的SOT效率高达0.3。此外,由于NiW的低晶体对称性,观察到了来自面外和类德雷斯尔豪斯自旋分量的非常规SOT。值得注意的是,在W/NiW(5纳米)中观察到SOT效率高达0.73,这可能是由于额外的界面贡献或外在效应。此外,利用NiW的多向SOT实现了垂直磁化的无场切换,突出了其作为用于节能自旋电子器件的低对称性SOT材料的潜力。